DataSheet26.com

SIHFP254 PDF даташит

Спецификация SIHFP254 изготовлена ​​​​«Vishay» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв SIHFP254
Описание Power MOSFET ( Transistor )
Производители Vishay
логотип Vishay логотип 

9 Pages
scroll

No Preview Available !

SIHFP254 Даташит, Описание, Даташиты
Power MOSFET
IRFP254, SiHFP254
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
140
24
71
Single
0.14
D
TO-247AC
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mouting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
TO-247AC
IRFP254PbF
SiHFP254-E3
IRFP254
SiHFP254
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 1.2 mH, Rg = 25 Ω, IAS = 23 A (see fig. 12).
c. ISD 23 A, dI/dt 180 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
250
± 20
23
15
92
1.5
410
23
19
190
4.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91214
S11-0487-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com









No Preview Available !

SIHFP254 Даташит, Описание, Даташиты
IRFP254, SiHFP254
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.65
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 14 Ab
VDS = 50 V, ID = 14 Ab
250 -
-V
- 0.39 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
μA
- - 250
-
-
0.14
Ω
11 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 23 A, VDS = 200 V,
see fig. 6 and 13b
VDD = 125 V, ID = 23 A,
Rg = 6.2 Ω, RD = 5.4 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
-
-
-
-
2700
620
180
-
-
-
15
63
74
50
5.0
-
-
-
140
24
71
-
-
-
-
-
13 -
pF
nC
ns
nH
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 23
A
- - 92
Body Diode Voltage
VSD
TJ = 25 °C, IS = 23 A, VGS = 0 Vb
- - 1.8 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
- 370 560 ns
TJ = 25 °C, IF = 23 A, dI/dt = 100 A/μsb
Qrr - 4.6 6.9 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
www.vishay.com
2
Document Number: 91214
S11-0487-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com









No Preview Available !

SIHFP254 Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFP254, SiHFP254
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91214
S11-0487-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com










Скачать PDF:

[ SIHFP254.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SiHFP250Power MOSFET ( Transistor )Vishay Siliconix
Vishay Siliconix
SIHFP254Power MOSFET ( Transistor )Vishay
Vishay
SiHFP254Power MOSFET ( Transistor )Vishay Siliconix
Vishay Siliconix
SiHFP254NPower MOSFET ( Transistor )Vishay Siliconix
Vishay Siliconix

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск