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Datasheet D3N50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D3N50 | AOD3N50 AOD3N50 3A, 500V N-Channel MOSFET
General Description
The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avala |  Alpha & Omega Semiconductors | data |
D3N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D3N40 | AOD3N40 AOD3N40
400V,2.6A N-Channel MOSFET
General Description
Product Summary
The AOD3N40 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along wi Alpha & Omega Semiconductors data | | |
| 2 | D3N50 | AOD3N50 AOD3N50 3A, 500V N-Channel MOSFET
General Description
The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avala Alpha & Omega Semiconductors data | | |
| 3 | D3NB50 | STD3NB50 STD3NB50
N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STD3NB50
s s s s s
V DSS 500 V
R DS(on) < 2.8 Ω
ID 3A
TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
3 1
 STMicroelectronics data | |
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