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IRF1324S-7PPBF PDF даташит

Спецификация IRF1324S-7PPBF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRF1324S-7PPBF
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

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IRF1324S-7PPBF Даташит, Описание, Даташиты
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRF1324S-7PPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
24V
0.8mΩ
cmax.
1.0mΩ
G
ID (Silicon Limited)
429A
S ID (Package Limited)
240A
D
G
Gate
S
SS
S
S
G
D2Pak 7 Pin
D
Drain
S
Source
Base part number
IRF1324S-7PPbF
Package Type
D2Pak-7Pin
Standard Pack
Form
Tube
Tape and Reel Left
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÙAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kJunction-to-Case
jJunction-to-Ambient (PCB Mount) , D2Pak
Quantity
50
800
Orderable Part Number
IRF1324S-7PPbF
IRF1324STRL-7PP
Max.
™429
™303
240
1640
300
2.0
± 20
1.6
-55 to + 175
300 (1.6mm from case)
230
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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IRF1324S-7PPBF Даташит, Описание, Даташиты
IRF1324S-7PPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
24 ––– ––– V VGS = 0V, ID = 250μA
d––– 0.023 ––– V/°C Reference to 25°C, ID = 5mA
g––– 0.80 1.0 mΩ VGS = 10V, ID = 160A
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
––– ––– 20 μA VDS = 24V, VGS = 0V
––– ––– 250
VDS = 19V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 20V
––– ––– -200
VGS = -20V
––– 3.0 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
hEffective Output Capacitance (Time Related)
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
47
58
122
19
240
86
93
7700
3380
1930
4780
4970
–––
252
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 50V, ID = 160A
nC ID = 75A
VDS =12V
gVGS = 10V
gID = 75A, VDS =0V, VGS = 10V
ns VDD = 16V
ID = 160A
gRG =2.7Ω
VGS = 10V
pF VGS = 0V
VDS = 19V
ƒ = 1.0MHz, See Fig.5
iVGS = 0V, VDS = 0V to 19V , See Fig.11
VGS = 0V, VDS = 0V to 19V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™––– ––– 429
A MOSFET symbol
showing the
––– ––– 1636 A integral reverse
G
––– ––– 1.3
––– 71 107
p-n junction diode.
gV TJ = 25°C, IS = 160A, VGS = 0V
ns TJ = 25°C
VR = 20V,
––– 74 110
TJ = 125°C
––– 83 120 nC TJ = 25°C
gIF = 160A
di/dt = 100A/μs
––– 92 140
TJ = 125°C
––– 2.0 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Calculated continuous current based on maximum allowable junction „ ISD 160A, di/dt 600A/μs, VDD V(BR)DSS, TJ 175°C.
temperature. Package limitation current is 240A. Note that current … Pulse width 400μs; duty cycle 2%.
limitations arising from heating of the device leads may occur with † Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.(Refer to AN-1140
as Coss while VDS is rising from 0 to 80% VDSS.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.018mH
RG = 25Ω, IAS = 160A, VGS =10V. Part not recommended for use
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Rθ is measured at TJ approximately 90°C
above this value.
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IRF1324S-7PPBF Даташит, Описание, Даташиты
IRF1324S-7PPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
100
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
10
0.1
4.5V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
10
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1.8
ID = 160A
1.6 VGS = 10V
1.4
10
TJ = 25°C
1
VDS = 15V
60μs PULSE WIDTH
0.1
23456789
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
10.0
ID= 75A
8.0
VDS= 19V
VDS= 12V
6.0
4.0
2.0
1000
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.0
0
50 100 150 200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 08, 2014
Free Datasheet http://www.Datasheet4U.com










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Номер в каталогеОписаниеПроизводители
IRF1324S-7PPBFPower MOSFET ( Transistor )International Rectifier
International Rectifier

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