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Datasheet 20N50 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
120N50N-Channel MOSFETS

N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer powe
OGFD
OGFD
mosfet
220N50N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N50 20A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current, etc. The UTC 20N50 is suitable f
Unisonic Technologies
Unisonic Technologies
mosfet
320N50N-Channel Power MOSFET, Transistor

SEMICONDUCTOR 20N50 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (20A, 500Volts) DESCRIPTION The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. th
nELL
nELL
mosfet
420N50FDP20N50

FDP20N50 500V N-Channel MOSFET May 2006 FDP20N50 500V N-Channel MOSFET Features • 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET D
Fairchild Semiconductor
Fairchild Semiconductor
data
520N50C1HGTH20N50C1

HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 April 1995 15A, 20A, 400V and 500V N-Channel IGBTs Packages HGTH-TYPES JEDEC TO-218AC EMITTER COLLECTOR COLLECTOR (FLANGE) GATE Features • 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fa
Intersil Corporation
Intersil Corporation
data


20N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
120N03HLMTD20N03HL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m
Motorola Semiconductors
Motorola Semiconductors
data
220N03LIPD20N03L

IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance
Infineon Technologies
Infineon Technologies
data
320N06N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching applications in pow
Inchange Semiconductor
Inchange Semiconductor
mosfet
420N06NTD20N06

NTD20N06 Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • • • • • • • • • • • • Pb−Free Packages are Ava
ETC
ETC
data
520N10N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N10 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
mosfet
620N15N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay dr
Inchange Semiconductor
Inchange Semiconductor
mosfet
720N1520A 150V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N15 20A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The U TC 20N15 is an N-Ch annel POWER MOSFET, it u ses UTC’s advanc ed techn ology to provide c ustomers with high switching speed and low gate charge. The UT C 20N15 is su itable fo r bridge ci rcu
UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
mosfet



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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