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Datasheet 20N50 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 20N50 | N-Channel MOSFETS N-Channel MOSFETS
DESCRIPTION
The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer powe | OGFD | mosfet |
2 | 20N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N50
20A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low leakage current, etc.
The UTC 20N50 is suitable f | Unisonic Technologies | mosfet |
3 | 20N50 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
20N50 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (20A, 500Volts)
DESCRIPTION
The Nell 20N50 is a three-terminal silicon device with current conduction capability of 20A, fast switching speed, low on-state resistance, breakdown voltage rating of 500V, and max. th | nELL | mosfet |
4 | 20N50 | FDP20N50
FDP20N50 500V N-Channel MOSFET
May 2006
FDP20N50
500V N-Channel MOSFET
Features
• 20A, 500V, RDS(on) = 0.23Ω @VGS = 10 V • Low gate charge ( typical 45.6 nC) • Low Crss ( typical 27 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
UniFET
D | Fairchild Semiconductor | data |
5 | 20N50C1 | HGTH20N50C1 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
April 1995
15A, 20A, 400V and 500V N-Channel IGBTs
Packages
HGTH-TYPES JEDEC TO-218AC
EMITTER COLLECTOR COLLECTOR (FLANGE) GATE
Features
• 15A and 20A, 400V and 500V • VCE(ON) 2.5V • TFI 1µs, 0.5µs • Low On-State Voltage • Fa | Intersil Corporation | data |
20N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 20N03HL | MTD20N03HL MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD20N03HDL/D
Designer's
HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m Motorola Semiconductors data | | |
2 | 20N03L | IPD20N03L IPD20N03L IPU20N03L OptiMOS® Buck converter series
Feature
•N-Channel
Product Summary VDS RDS(on) ID
P- TO251 -3-1
30 20 30
P- TO252 -3-11
V mΩ A
•Logic Level •Low On-Resistance RDS(on)
•Excellent Gate Charge x R DS(on) product (FOM)
•Superior thermal resistance Infineon Technologies data | | |
3 | 20N06 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
20N06
·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.085Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching applications in pow Inchange Semiconductor mosfet | | |
4 | 20N06 | NTD20N06
NTD20N06 Power MOSFET
20 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
• • • • • • • • • • • •
Pb−Free Packages are Ava ETC data | | |
5 | 20N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
20N10
·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.12Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
· Inchange Semiconductor mosfet | | |
6 | 20N15 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.13Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay dr Inchange Semiconductor mosfet | | |
7 | 20N15 | 20A 150V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N15
20A, 150V N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The U TC 20N15 is an N-Ch annel POWER MOSFET, it u ses UTC’s advanc ed techn ology to provide c ustomers with high switching speed and low gate charge. The UT C 20N15 is su itable fo r bridge ci rcu UNISONIC TECHNOLOGIES mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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