DataSheet26.com

50N60T PDF даташит

Спецификация 50N60T изготовлена ​​​​«Infineon» и имеет функцию, называемую «IKW50N60T».

Детали детали

Номер произв 50N60T
Описание IKW50N60T
Производители Infineon
логотип Infineon логотип 

13 Pages
scroll

No Preview Available !

50N60T Даташит, Описание, Даташиты
TrenchStop® Series
IKW50N60T
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IKW50N60T 600V 50A
1.5V
175C K50T60 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175C)
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time3)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
600
802)
50
150
150
100
50
150
20
5
333
-40...+175
-55...+175
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Value limited by bond wire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 12.06.2013
http://www.Datasheet4U.com









No Preview Available !

50N60T Даташит, Описание, Даташиты
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
TrenchStop® Series
IKW50N60T
q
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.45
0.8
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=50A
Tj=25C
Tj=175C
VGE=0V, IF=50A
Tj=25C
Tj=175C
IC=0.8mA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=50A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
Typ.
-
1.5
1.9
1.65
1.6
4.9
-
-
-
31
-
Unit
max.
-V
2
-
2.05
-
5.7
µA
40
1000
100
-
nA
S
Ω
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=50A
VGE=15V
VGE=15V,tSC5s
VCC = 400V,
Tj 150C
-
-
-
-
-
-
3140
200
93
310
13
458.3
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 12.06.2013
http://www.Datasheet4U.com









No Preview Available !

50N60T Даташит, Описание, Даташиты
TrenchStop® Series
IKW50N60T
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=50A,
VGE=0/15V,
RG= 7 ,
L1)=103nH,
C1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=400V, IF=50A,
diF/dt=1280A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
26
29
299
29
1.2
1.4
2.6
143
1.8
27.7
671
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175C,
VCC=400V,IC=50A,
VGE=0/15V,
RG= 7
L1)=103nH,
C1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=175C
VR=400V, IF=50A,
diF/dt=1280A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
27
33
341
55
1.8
1.8
3.6
205
4.3
40.7
449
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.5 12.06.2013
http://www.Datasheet4U.com










Скачать PDF:

[ 50N60T.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
50N60IXRH50N60IXYS
IXYS
50N60TIKW50N60TInfineon
Infineon

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск