2SC3279 PDF даташит
Спецификация 2SC3279 изготовлена «SEMTECH» и имеет функцию, называемую «NPN Silicon Epitaxial Planar Transistor». |
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Детали детали
Номер произв | 2SC3279 |
Описание | NPN Silicon Epitaxial Planar Transistor |
Производители | SEMTECH |
логотип |
3 Pages
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ST 2SC3279
NPN Silicon Epitaxial Planar Transistor
for storobo flash and medium power amplifier
applications.
The transistor is subdivided into four groups L, M,
N and P, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25 oC)
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Pulsed(Note 1)
DC
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1: Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Symbol
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
Ptot
Tj
TS
G S P FORM A IS AVAILABLE
Value
30
30
10
6
5
2
0.2
750
150
-55 to +150
Unit
V
V
V
A
A
A
mW
OC
OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: [email protected]
Веб: www.rct.ru
®
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ST 2SC3279
Characteristics at Tamb=25 OC
DC Current Gain
at VCE=1V, IC=0.5A
at VCE=1V, IC=2A
Collector Cutoff Current
at VCB=30V
Emitter Cutoff Current
at VEB=6V
Collector-Emitter Breakdown Voltage
at IC=10mA
Emitter-Base Breakdown Voltage
at IE=1mA
Collector Output Capacitance
at VCB=10V, f=1.0MHz
Collector to Emitter Saturation Voltage
at IC=2A, IB=50mA
Base-Emitter Voltage
at VCE=1V, IC=2A
Transition Frequency
at VCE=1V, IC=0.5A
Symbol
L hFE
M hFE
N hFE
P hFE
hFE
ICBO
IEBO
V(BR)CEO
V(BR)EBO
Cob
VCE(sat)
VBE
fT
Min.
140
200
300
420
70
-
-
10
6
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
-
200
-
-
-
-
27
0.2
0.86
150
Max.
240
330
450
600
-
0.1
0.1
-
-
-
0.5
1.5
-
Unit
-
-
-
-
-
µA
µA
V
V
pF
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
http://www.Datasheet4U.com
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ST 2SC3279
I C - VCE
5
40
4 30
COMMON EMITTER
Ta=25 oC
3 20
2 10
I B=5mA
1
0
0 1 2 3 4 5 67
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - IC
500 Ta=100oC
300
25
- 25
100
50
30
0.05 0.1
COMMON EMITTER
VCE=1V
0.3 1
3
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
10
I C MAX.(PULSED)**
5
1ms*
3 I C MAX.(CONTINUOUS)
-100ms*
1
DC OPERATION
(Ta=25oC)
10ms*
0.5 * SINGLE NONREPETITIVE
0.3 PTaU=L2S5EoC
* PULSE WIDTH 10 ms
0.1 **DUTY CYCLE 30%
CURVES MUST BE
0.05 DERATED LINEARLY WITH
0.03 INCREASE IN TEMPERATURE
0.03 0.1 0.3 1
VCEO
MAX.
3
10
30
COLLECTOR-EMITTER VOLTAGE VCE (V)
I C - VBE
5 COMMON EMITTER
VCE=1V
4
3
Ta=100 oC
2 25 - 25
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
VCE(sat) - IC
0.5 COMMON EMITTER
I C/I B=40
0.3
Ta=100 oC
0.1
25
- 25
0.05
0.03
0.05 0.1
0.3
1
3
COLLECTOR CURRENT IC (A)
1000
Pc - Ta
800
600
400
200
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (oC)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
® listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/12/2002
http://www.Datasheet4U.com
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