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PDF MA6116 Data sheet ( Hoja de datos )
| Número de pieza | MA6116 | |
| Descripción | (MA6116 / MA6216) RADIATION HARD 2048 x 8 BIT STATIC RAM | |
| Fabricantes | GEC PLESSEY | |
| Logotipo |  |
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MA6116 &MAMRCAH62191965
MA6116 & MA6216
RADIATION HARD 2048 x 8 BIT STATIC RAM
DS3582-3.1
The MA6116 16k Static RAM is configured as 2048 x 8 bits and
manufactured using CMOS-SOS high performance, radiation hard,
3µm technology. The MA6216 is manufactured using 2.5µm technology
resulting in faster performance.
The design uses a 6 transistor cell and has full static operation with
no clock or timing strobe required. Address input buffers are deselected
when chip select is in the HIGH state.
Operation Mode CS OE WE I/O Power
Read
Write
Write
Standby
L L H D OUT
L H L D IN
L L L D IN
H X X High Z
ISB1
ISB2
Figure 1: Truth Table
FEATURES
s 3µm CMOS-SOS Technology
s Latch-up Free
s Fast Access Time 110ns (MA6116) and 85ns
(MA6216) Typical
s Total Dose 106 Rad(Si)
s Transient Upset >1010 Rad(Si)/sec
s SEU <10-10 Errors/bitday
s Single 5V Supply
s Three State Output
s Low Standby Current 100µA Typical
s -55°C to +125°C Operation
s TTL and CMOS Compatible Inputs
s Fully Static Operation
Figure 2: Block Diagram
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TIMING DIAGRAMS
ADDRESS
CS
DATA OUT
OE
TAVAVR
TAVQV
TELQV
TELQX
HIGH
IMPEDANCE
TGLQX
TGLQV
MA6116 & MA6216
TAXQX
DATA VALID
TEHQZ
TGHQZ
1. WE is high for Read Cycle.
2. Address Vaild prior to or coincident with CS transition low.
Figure 11a: Read Cycle 1
ADDRESS
TAVAVR
TAVQV
TAXQX
DATA OUT
1. WE is high for Read Cycle.
2. Device is continually selected. CS is high.
DATA VALID
Figure 11b: Read Cycle 2
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MA6116 & MA6216
RADIATION TOLERANCE
Total Dose Radiation Testing
For product procured to guaranteed total dose radiation
levels, each wafer lot will be approved when all sample
devices from each lot pass the total dose radiation test.
The sample devices will be subjected to the total dose
radiation level (Cobalt-60 Source), defined by the ordering
code, and must continue to meet the electrical parameters
specified in the data sheet. Electrical tests, pre and post
irradiation, will be read and recorded.
GEC Plessey Semiconductors can provide radiation
testing compliant with MIL-STD-883 test method 1019,
Ionizing Radiation (Total Dose).
Total Dose (Function to specification)*
1x105 Rad(Si)
Transient Upset (Stored data loss)
5x1010 Rad(Si)/sec
Transient Upset (Survivability)
>1x1012 Rad(Si)/sec
Neutron Hardness (Function to specification) >1x1015 n/cm2
Single Event Upset**
3.4x10-9 Errors/bit day
Latch Up
Not possible
* Other total dose radiation levels available on request
** Worst case galactic cosmic ray upset - interplanetary/high altitude orbit
Figure 17: Radiation Hardness Parameters
SINGLE EVENT UPSET CHARACTERISTICS
UPSET BIT
CROSS-SECTION
(cm2/bit)
Ion LET (MeV.cm2/mg)
Figure 18: Typical Per-Bit Upset Cross-Section vs Ion LET
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MA6116.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MA6116 | (MA6116 / MA6216) RADIATION HARD 2048 x 8 BIT STATIC RAM | GEC PLESSEY |
| MA6116A | USB2.0 to SATA Bridge Controller |  Moai |
| Número de pieza | Descripción | Fabricantes |
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