SUD50P10-43L Datasheet PDF - Vishay
| Part Number | SUD50P10-43L | |
| Description | P-Channel MOSFET | |
| Manufacturers | Vishay | |
| Logo |  |
|
|
There is a preview and SUD50P10-43L download ( pdf file ) link at the bottom of this page. Total 9 Pages | ||
Preview 1 page No Preview Available !
SUD50P10-43L
Vishay Siliconix
P-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 100
0.043 at VGS = - 10 V
0.048 at VGS = - 4.5 V
ID (A)a
- 37
- 35
Qg (Typ.)
54 nC
TO-252
FEATURES
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
S
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P10-43L-E3 (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)b
TC = 125 °C
TA = 25 °C
ID
TA = 125 °C
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 100
± 20
- 37.1a
- 31a
- 9.2b, c
- 7.7b, c
- 40
- 50a
- 6.9b, c
- 35
61
136
95
8.3b, c
5.8b, c
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
www.vishay.com
1
http://www.Datasheet4U.com
|
| |
 
SUD50P10-43L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 140
120
40
100
30 80
20 60
40
10
20
0
0
100
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Single Pulse Power, Junction-to-Ambient
10
TA
L IA
BV - VDD
1
0.000001
0.00001
0.0001
0.001
TA - Time In Avalanche (s)
Single Pulse Avalance Capability
0.01
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73444
S09-1398-Rev. C, 20-Jul-09
www.vishay.com
5
http://www.Datasheet4U.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SUD50P10-43L electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ SUD50P10-43L.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| SUD50P10-43 | The function is P-Channel MOSFET. Vishay | |
| SUD50P10-43L | The function is P-Channel MOSFET. Vishay | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
SUD5
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||