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TSC5304ED PDF даташит

Спецификация TSC5304ED изготовлена ​​​​«Taiwan Semiconductor» и имеет функцию, называемую «High Voltage NPN Transistor».

Детали детали

Номер произв TSC5304ED
Описание High Voltage NPN Transistor
Производители Taiwan Semiconductor
логотип Taiwan Semiconductor логотип 

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TSC5304ED Даташит, Описание, Даташиты
TSC5304ED
High Voltage NPN Transistor with Diode
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCEO
BVCBO
IC
VCE(SAT)
400V
700V
4A
0.25V (Typ.) @ IC=0.5A, IB=0.1A
Features
Build-in Free-wheeling Diode Makes Efficient Anti-
saturation Operation
Low Base Drive Requirement
Suitable for Half Bridge Light Ballast Application
Structure
Silicon Triple Diffused Type
NPN Silicon Transistor
Integrated Anti-parallel Collector-Emitter Diode
Ordering Information
Part No.
Package
Packing
TSC5304EDCP ROG TO-252 2.5Kpcs / 13” Reel
TSC5304EDCH C5G
TO-251
75pcs / Tube
Note: “G” denote for Halogen Free Product
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage @ VBE=0V
VCES
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Peak Current (tp <5ms)
ICM
Base Current
IB
Base Peak Current (tp <5ms)
IBM
Power Total Dissipation @ Tc=25ºC
PDTOT
Maximum Operating Junction Temperature
TJ
Storage Temperature Range
TSTG
Limit
700
700
400
9
4
8
2
4
35
+150
-55 to +150
Unit
V
V
V
V
A
A
A
A
W
oC
oC
1/6
Version: E11
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TSC5304ED Даташит, Описание, Даташиты
TSC5304ED
High Voltage NPN Transistor with Diode
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨJC
RӨJA
Limit
3.57
68
Unit
oC/W
oC/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Static
Collector-Base Voltage
IC =1mA, IB =0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
IC =10mA, IE =0
IE =1mA, IC =0
VCB =700V, IE =0
VCE =400V, IB =0
VEB =7V, IC =0
IC =0.5A, IB =0.1A
IC =1A, IB =0.2A
IC =2.5A, IB =0.5A
Base-Emitter Saturation Voltage
DC Current Gain
Forward Voltage Drop
Turn On Time
Storage Time
Fall Time
IC =4A, IB =1A
IC =1A, IB =0.2A
IC =2A, IB =0.5A
VCE =5V, IC =10mA
VCE =5V, IC =1A
VCE =5V, IC =2A
IF =2A
VCC =250V, IC =1A,
IB1=IB2=0.2A, tp=25uS
Duty Cycle<1%
Turn On Time
VCC =5V, IC =0.1A,
Storage Time
IB1=IB2=0.02A, tp=25uS
Fall Time
Duty Cycle<1%
Notes: Pulsed duration =380uS, duty cycle 2%
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
VCE(SAT)4
VBE(SAT)1
VBE(SAT)2
Hfe
Vf
tON
tSTG
tf
tON
tSTG
tf
Min
700
400
9
--
--
--
--
--
--
--
--
--
10
17
12
--
--
--
--
--
6.5
--
Typ
--
--
--
--
--
--
0.25
0.5
1.2
0.5
--
--
--
--
--
--
0.2
3.0
0.2
0.35
--
0.3
Max Unit
-- V
-- V
-- V
100 uA
250 uA
10 uA
0.7
1
V
1.5
--
1.1
V
1.2
--
37
32
2V
0.6 uS
4.5 uS
0.3 uS
0.6 uS
8.5 uS
0.6 uS
2/6
Version: E11
http://www.Datasheet4U.com









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TSC5304ED Даташит, Описание, Даташиты
TSC5304ED
High Voltage NPN Transistor with Diode
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Vce(sat) v.s. Vbe(sat)
Figure 4. Power Derating
Figure 5. Reverse Bias SOA
Figure 6. Safety Operating Area
3/6
Version: E11
http://www.Datasheet4U.com










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Номер в каталогеОписаниеПроизводители
TSC5304EDHigh Voltage NPN TransistorTaiwan Semiconductor
Taiwan Semiconductor

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