EL817-G PDF даташит
Спецификация EL817-G изготовлена «Everlight» и имеет функцию, называемую «4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER». |
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Детали детали
Номер произв | EL817-G |
Описание | 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
Производители | Everlight |
логотип |
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4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G Series
Schematic
Features:
• Halogens free.
• Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
• High isolation voltage between input
and output (Viso=5000 V rms )
• Creepage distance >7.62 mm
• Operating temperature up to +110°C
• Compact small outline package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved
• CQC approved
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Description
The EL817-G series of devices each consist of an infrared emitting diodes, optically
coupled to a phototransistor detector encapsulated with green compound.
The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option.
Applications
• Programmable controllers
• System appliances, measuring instruments
• Telecommunication equipments
• Home appliances, such as fan heaters, etc.
• Signal transmission between circuits of different potentials and impedances
1 Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
www.everlight.com
http://www.Datasheet4U.com
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DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Input
Forward current
Peak forward current (1us, pulse)
Reverse voltage
Power Dissipation
IF
IFP
VR
PD
Break Down Voltage
Output
Collector current
Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation
Isolation Voltage*1
Operating Temperature
Storage Temperature
Soldering Temperature*2
PC
IC
VCEO
VECO
PTOT
VISO
TOPR
TSTG
TSOL
60
1
6
100
2.9
150
5.8
50
80
7
200
5000
-55 to 110
-55 to 125
260
mA
A
V
mW
mW/°C
mW
mW/°C
mA
V
V
mW
V rms
°C
°C
°C
Notes:
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.
*2 For 10 seconds
2 Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
www.everlight.com
http://www.Datasheet4U.com
No Preview Available ! |
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817-G series
Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)
Input
Parameter
Symbol
Forward Voltage
Reverse Current
Input capacitance
VF
IR
Cin
Output
Parameter
Symbol
Collector-Emitter dark
current
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
ICEO
BVCEO
BVECO
Min.
-
-
-
Min
-
80
7
Typ. Max.
1.2 1.4
- 10
30 250
Typ. Max.
- 100
--
--
Unit Condition
V IF = 20mA
µA VR = 4V
pF V = 0, f = 1kHz
Unit Condition
nA VCE = 20V, IF = 0mA
V IC = 0.1mA
V IE = 0.1mA
Transfer Characteristics
Parameter
Symbol Min Typ. Max.
EL817
50 - 600
EL817A
80 - 160
Current
Transfer
ratio
EL817B
EL817C
EL817D
CTR
130
200
300
- 260
- 400
- 600
EL817X
100 - 200
EL817Y
Collector-Emitter
saturation voltage
VCE(sat)
150
-
- 300
0.1 0.2
Isolation resistance
RIO 5×1010
-
-
Floating capacitance
CIO
- 0.6 1.0
Cut-off frequency
fc - 80 -
Rise time
Fall time
tr - 6 18
tf - 8 18
Unit Condition
% IF = 5mA ,VCE = 5V
V IF = 20mA ,IC = 1mA
Ω
VIO = 500Vdc,
40~60% R.H.
pF VIO = 0, f = 1MHz
kHz
VCE = 5V, IC = 2mA
RL = 100Ω, -3dB
µs VCE = 2V, IC = 2mA,
µs RL = 100Ω
* Typical values at Ta = 25°C
3 Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000011 Rev.7
www.everlight.com
http://www.Datasheet4U.com
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Номер в каталоге | Описание | Производители |
EL817-G | 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER | Everlight |
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