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SW6N90 PDF даташит

Спецификация SW6N90 изготовлена ​​​​«SEMIPOWER» и имеет функцию, называемую «N-channel TO-262 MOSFET».

Детали детали

Номер произв SW6N90
Описание N-channel TO-262 MOSFET
Производители SEMIPOWER
логотип SEMIPOWER логотип 

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SW6N90 Даташит, Описание, Даташиты
SAMWIN
SW6N90
N-channel TO-262 MOSFET
Features
High ruggedness
RDS(ON) (Max 2.3 )@VGS=10V
Gate Charge (Typical 40nC)
Improved dv/dt Capability
100% Avalanche Tested
TO-262
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 900V
ID : 6.0A
RDS(ON) : 2.3ohm
2
1
3
Order Codes
Item
1
Sales Type
SW U 6N90
Marking
SW6N90
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
Package
TO-262
Packaging
TUBE
Value
900
6.0*
3.78*
24
±30
550
150
5
231
1.85
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Thermal characteristics
Symbol
Parameter
Rthjc
Rthcs
Rthja
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
0.54
-
65
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5
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SW6N90 Даташит, Описание, Даташиты
SAMWIN
SW6N90
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS Gate to source leakage current, reverse
On characteristics
VDS=900V, VGS=0V
VDS=720V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDS=VGS, ID=250uA
VGS=10V, ID = 3A
VDS = 40 V, ID = 3 A
VGS=0V, VDS=25V, f=1MHz
VDS=450V, ID=6A, RG=25
(note 45)
VDS=720V, VGS=10V, ID=6A
(note 45)
Source to drain diode ratings characteristics
Min.
900
3.0
6
Typ. Max. Unit
V
0.91
V/oC
1
50
100
-100
uA
uA
nA
nA
5.0 V
1.8 2.3
S
1400
120 pF
35
23 50
26 60
ns
58 120
24 50
40 90
8 nC
19
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
VSD Diode forward voltage drop.
Trr Reverse recovery time
Qrr Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=6.0A, VGS=0V
IS=6.0A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 30mH, IAS = 6.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 6.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min. Typ. Max. Unit
6.0 A
24.0 A
1.5 V
436 ns
5.2 uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
2/5
http://www.Datasheet4U.com









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SW6N90 Даташит, Описание, Даташиты
SAMWIN
Fig. 1. On-state characteristics
SW6N90
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
3/5
http://www.Datasheet4U.com










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Номер в каталогеОписаниеПроизводители
SW6N90N-channel TO-262 MOSFETSEMIPOWER
SEMIPOWER

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