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IRF6785MTRPbF PDF даташит

Спецификация IRF6785MTRPbF изготовлена ​​​​«IRF» и имеет функцию, называемую «DIGITAL AUDIO MOSFET».

Детали детали

Номер произв IRF6785MTRPbF
Описание DIGITAL AUDIO MOSFET
Производители IRF
логотип IRF логотип 

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IRF6785MTRPbF Даташит, Описание, Даташиты
PD - 97282
IRF6785MTRPbFDIGITAL AUDIO MOSFET
Features
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 250W per channel into 8Load in
Half-Bridge Configuration Amplifier
Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Key Parameters
VDS 200
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) max
85
26
3.0
V
m:
nC
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Maximum Power Dissipation
ePower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy
ÙAvalanche Current
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
ekJunction-to-Ambient
hkJunction-to-Ambient
ikJunction-to-Ambient
jkJunction-to-Case
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Max.
200
± 20
19
3.4
2.7
27
57
2.8
1.8
33
8.4
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.4
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
1
04/18/07
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IRF6785MTRPbF Даташит, Описание, Даташиты
IRF6785MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
V(BR)DSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
VGS(th)
Gate Threshold Voltage
3.0
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
RG(int)
Internal Gate Resistance
–––
Typ.
–––
0.22
85
–––
–––
–––
–––
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
gfs Forward Transconductance
8.9 –––
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 26
––– 6.3
––– 1.3
––– 6.9
––– 11.5
––– 8.2
––– 6.2
––– 8.6
––– 7.2
––– 14
––– 1500
––– 160
––– 31
––– 1140
––– 69
––– 140
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
Typ.
–––
––– –––
––– –––
––– 71
––– 190
Max.
–––
–––
100
5.0
20
250
100
-100
3.0
Units
V
V/°C
m
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
fReference to 25°C, ID = 1mA
VGS = 10V, ID = 4.2A
VDS = VGS, ID = 100µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max.
–––
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
nC
Conditions
VDS = 10V, ID = 4.2A
VDS = 100V
VGS = 10V
ID = 4.2A
See Fig. 6 and 17
VDD = 100V
ID = 4.2A
fns RG = 6.0
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
gVGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V
Max.
19
27
1.3
–––
–––
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
fTJ = 25°C, IS = 4.2A, VGS = 0V
fTJ = 25°C, IF = 4.2A, VDD = 25V
di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.94mH, RG = 25, IAS = 8.4A.
ƒ Surface mounted on 1 in. square Cu board.
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
† Used double sided cooling , mounting pad with large heatsink.
‡ Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
ˆ TC measured with thermal couple mounted to top
(Drain) of part.
‰ Rθ is measured at TJ of approximately 90°C.
2 www.irf.com
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IRF6785MTRPbF Даташит, Описание, Даташиты
100
10
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VDS = 25V
60µs PULSE WIDTH
10 TJ = -40°C
TJ = 25°C
TJ = 150°C
1
IRF6785MTRPbF
100
10
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
ID = 4.2A
VGS = 10V
2.0
1.5
1.0
0.1
345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
12.0
10.0
8.0
ID= 4.2A
VDS= 160V
VDS= 100V
VDS= 40V
6.0
4.0
2.0
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
5 10 15 20 25 30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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Номер в каталогеОписаниеПроизводители
IRF6785MTRPbFDIGITAL AUDIO MOSFETIRF
IRF
IRF6785MTRPBFDigital Audio MOSFETInternational Rectifier
International Rectifier

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