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IRF6643TRPbF PDF даташит

Спецификация IRF6643TRPbF изготовлена ​​​​«IRF» и имеет функцию, называемую «DIGITAL AUDIO MOSFET».

Детали детали

Номер произв IRF6643TRPbF
Описание DIGITAL AUDIO MOSFET
Производители IRF
логотип IRF логотип 

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IRF6643TRPbF Даташит, Описание, Даташиты
DIGITAL AUDIO MOSFET
IRF6643TRPbF
Features
Latest MOSFET silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 200 W per channel into 8Ω load in half-bridge
configuration amplifier
Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant, halogen-free
Lead-free (qualified up to 260°C reflow)
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
Key Parameters
VDS
RDS(ON) typ. @ VGS = 10V
Qg typ.
150
29
39
RG(int) typ.
0.9
V
mΩ
nC
Ω
MZ DirectFET® ISOMETRIC
SH SJ ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
IRF6643TRPbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6643TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
PD @TC = 25°C
Power Dissipation
PD @TA = 25°C
PD @TA = 70°C
EAS
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
IAR Avalanche Current
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1 www.irf.com © 2013 International Rectifier
Max.
±20
35
6.2
5.0
76
89
2.8
1.8
50
7.6
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
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IRF6643TRPbF Даташит, Описание, Даташиты
IRF6643TRPbF
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case 
Junction-to-PCB Mounted
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance
16
Qg
Qgs1
Qgs2
Qgd
Qgodr
Total Gate Charge
Pre-VthGate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
–––
–––
–––
–––
–––
Qsw Switch Charge (Qgs2 + Qgd)
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
Coss Output Capacitance
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Typ.
–––
0.18
29
4.0
-11
–––
–––
–––
–––
0.8
Max.
–––
–––
34.5
4.9
–––
20
250
100
-100
–––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
mΩ VGS = 10V, ID = 7.6A
V VDS = VGS, ID = 150µA
mV/°C
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ=125°C
nA VGS = 20V
VGS = -20V
Ω
–––
39
9.6
2.2
11
16
13
9.2
5.0
13
4.4
2340
300
61
1950
140
–––
55
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S VDS = 10V, ID = 7.6A
VDS = 75V
VGS = 10V
nC ID = 7.6A
ns VDD = 75V, VGS = 10V
ID = 7.6A
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS=0V, VDS=1.0V, ƒ=1.0MHz
VGS=0V, VDS=80V, ƒ=1.0MHz
Typ.
–––
–––
–––
67
190
Max.
58
76
1.3
100
280
Units
Conditions
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 7.6A, VGS = 0V
ns TJ = 25°C, IF = 7.6A,VDD = 50V
nC di/dt = 100A/µs
2 www.irf.com © 2013 International Rectifier
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IRF6643TRPbF Даташит, Описание, Даташиты
IRF6643TRPbF
100
10
7.0V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
10
7.0V
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
TJ = 150°C
TJ = 25°C
10 TJ = -40°C
1
0.1
4.0
VDS = 10V
60µs PULSE WIDTH
5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
100 Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2013 International Rectifier
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 7.6A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12
ID= 7.6A
10 VDS= 120V
VDS= 75V
8 VDS= 30V
6
4
2
0
0 10 20 30 40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs Gate-to-Source Voltage
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Номер в каталогеОписаниеПроизводители
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IRF

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