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EMB2 PDF даташит

Спецификация EMB2 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «PNP -100mA -50V Complex Digital Transistors».

Детали детали

Номер произв EMB2
Описание PNP -100mA -50V Complex Digital Transistors
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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EMB2 Даташит, Описание, Даташиты
EMB2 / UMB2N / IMB2A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Tr1 and Tr2
-50V
-100mA
47kW
47kW
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 47kW.
2) Two DTA144E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lOutline
EMT6
(6)
(5)
(1) (4)
(2)
(3)
EMB2
(SC-107C)
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMB2A
SOT-457 (SC-74)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMB2N
SOT-353 (SC-88)
lInner circuit
EMB2 / UMB2N
OUT IN GND
(6) (5)
(4)
IMB2A
OUT
(4)
IN
(5)
GND
(6)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(1)
GND
(2)
IN
(3)
OUT
(3)
GND
(2)
IN
(1)
OUT
lPackaging specifications
Part No.
Package
EMB2
UMB2N
IMB2A
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
B2
B2
B2
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
2012.06 - Rev.B
http://www.Datasheet4U.com









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EMB2 Даташит, Описание, Даташиты
EMB2 / UMB2N / IMB2A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMB3 / UMB3N
IMB3A
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IO
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
-50
-40 to +10
-30
-100
150 (Total)*3
300 (Total)*4
150
-55 to +150
Unit
V
V
mA
mA
mW
mW
°C
°C
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Input voltage
VI(off)
VI(on)
Output voltage
VO(on)
Input current
Output current
DC current gain
Input resistance
Resistance ratio
II
IO(off)
GI
R1
R2/R1
Conditions
VCC = -5V, IO = -100mA
VO = -0.3V, IO = -2mA
IO / II = -10mA / -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -5mA
-
-
Transition frequency
fT *1
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Min.
-
-3.0
-
-
-
68
32.9
0.8
-
Typ.
-
-
-0.1
-
-
-
47
1
Max.
-0.5
-
-0.3
-0.18
-0.5
-
61.1
1.2
Unit
V
V
mA
mA
-
kW
-
250 - MHz
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/7
2012.06 - Rev.B
http://www.Datasheet4U.com









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EMB2 Даташит, Описание, Даташиты
EMB2 / UMB2N / IMB2A
lElectrical characteristic curves(Ta = 25°C)
Data Sheet
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.3 Output current vs. output voltage
-30
Ta=25ºC
-25
-20
-15
-10
-5
0
0
-5
II=
-130μA
-120μA
-110μA
-100μA
-90μA
-80μA
-70μA
-60μA
-50μA
-40μA
-30μA
0A
-10
OUTPUT VOLTAGE : VO [V]
Fig.4 DC current gain vs. output current
OUTPUT CURRENT : IO [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/7
2012.06 - Rev.B
http://www.Datasheet4U.com










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