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BLV91-SL PDF даташит

Спецификация BLV91-SL изготовлена ​​​​«Philips» и имеет функцию, называемую «UHF power transistor».

Детали детали

Номер произв BLV91-SL
Описание UHF power transistor
Производители Philips
логотип Philips логотип 

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BLV91-SL Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV91/SL
UHF power transistor
Product specification
September 1988
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BLV91-SL Даташит, Описание, Даташиты
Philips Semiconductors
UHF power transistor
Product specification
BLV91/SL
DESCRIPTION
NPN silicon planar epitaxial transistor designed for use in
mobile radio transmitters in the 900 MHz band.
FEATURES
diffused emitter-ballasting resistors for an optimum
temperature profile.
gold metallization ensures excellent reliability.
the device can be applied at rated load power, without
an external heatsink, when it is mounted on a
printed-circuit board (see Fig.6).
The transistor has a 4-lead envelope with a ceramic cap
(SOT-172D). All leads are isolated from the mounting
base.
QUICK REFERENCE DATA
RF performance in a common-emitter class-B circuit
MODE OF OPERATION
narrow band; CW
T
°C
Tmb = 25
Ta = 25(1)
Ta = 25(1)
VCE
V
12.5
12.5
9.6
Note
1. Device mounted on a printed-circuit board (see Fig.6).
f
MHz
900
900
900
PL Gp ηC
W dB %
2
> 6.5
> 50
1.5
> 6.5
> 50
1.5
typ. 6.6
typ. 60
PIN CONFIGURATION
handbook, halfpage
1
2
3
PINNING - SOT172D.
PIN DESCRIPTION
1 emitter
2 base
3 collector
4 emitter
Top view
4
MSB007
Fig.1 Simplified outline. SOT172D.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe
provided that the BeO disc is not damaged.
September 1988
2
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BLV91-SL Даташит, Описание, Даташиты
Philips Semiconductors
UHF power transistor
Product specification
BLV91/SL
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
DC or average
(peak value); f > 1 MHz
Total power dissipation
f > 1 MHz; Tmb 90 °C
Storage temperature
Operating junction temperature
VCBO
VCEO
VEBO
IC; IC(AV)
ICM
Ptot(RF)
Tstg
Tj
max.
max.
max.
36 V
16 V
3V
max.
max.
0.4 A
1.2 A
max.
6W
65 to + 150 °C
max. 200 °C
10
handbook, halfpage
Ptot(rf)
(W)
8
6
4
II
I
MDA398
2
0
0 40
I Continuous RF operation (f > 1 MHz)
II Short-time RF operation during mismatch (f > 1 MHz)
80 120 160
Tmb (°C)
Fig.2 Power/temperature curve.
THERMAL RESISTANCE
Dissipation = 4.5 W
From junction to ambient(1) (f > 1 MHz)
Ta = 25 °C
From junction to mounting base
Tmb = 25 °C (f > 1 MHz)
Note
1. Device mounted on a printed-circuit board (see Fig.6).
Rth j-a (RF) max. 55 K/W
Rth j-mb (RF) max. 15 K/W
September 1988
3
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BLV91-SLUHF power transistorPhilips
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