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BLU11SL PDF даташит

Спецификация BLU11SL изготовлена ​​​​«Philips» и имеет функцию, называемую «UHF power transistor».

Детали детали

Номер произв BLU11SL
Описание UHF power transistor
Производители Philips
логотип Philips логотип 

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BLU11SL Даташит, Описание, Даташиты
DISCRETE SEMICONDUCTORS
DATA SHEET
BLU11/SL
UHF power transistor
Product specification
July 1986
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BLU11SL Даташит, Описание, Даташиты
Philips Semiconductors
UHF power transistor
Product specification
BLU11/SL
DESCRIPTION
FEATURES
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile transmitters in the 470 MHz
band.
multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile.
gold metallization ensures
excellent reliability.
the device can be applied at a PL of
max. 1,5 W when it is mounted on a
printed wiring board (see Fig.6)
without an external heatsink.
The transistor has a 4-lead envelope
with a ceramic cap (SOT-122D). All
leads are isolated from the mounting
base.
QUICK REFERENCE DATA
R.F. performance in a common-emitter class-B circuit.
MODE OF OPERATION
T
°C
narrow band; c.w.
Tmb = 25
Ta = 25(1)
VCE
V
12,5
12,5
f
MHz
470
470
PL
W
2,5
1,5
Note
1. Device mounted on a printed wiring board (see Fig.6).
Gp
dB
> 10
> 12
ηC
%
> 55
> 55
PIN CONFIGURATION
handbook, halfpage
4
1
3
PINNING - SOT122D.
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
2
MSB055
Fig.1 Simplified outline. SOT122D.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
July 1986
2
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BLU11SL Даташит, Описание, Даташиты
Philips Semiconductors
UHF power transistor
Product specification
BLU11/SL
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
VCBO
VCEO
VEBO
d.c. or average
(peak value), f > 1 MHz
Total power dissipation
IC; IC(AV)
ICM
at Tmb 90 °C; f > 1 MHz
Storage temperature
Operating junction temperature
Ptot(rf)
Tstg
Tj
10
handbook, halfpage
Ptot(rf)
(W)
8
6
4
II
I
MDA306
2
0
0
I Continuous r.f. operation (f > 1 MHz)
II Short-time r.f. operation during mismatch (f > 1 MHz)
40
80 120 160
Tmb (°C)
Fig.2 Power/temperature derating curves.
max.
max.
max.
36 V
16 V
3V
max.
max.
0,4 A
1,2 A
max.
6W
65 to +150 °C
max. 200 °C
THERMAL RESISTANCE
Dissipation = 4,5 W
From junction to ambient(1)
at Ta = 25 °C; f > 1 MHz (r.f. operation)
From junction to mounting base
at Tmb = 25 °C; f > 1 MHz (r.f. operation)
Note
1. Device mounted on a printed wiring board (see Fig.6).
Rth j-a (rf)
Rth j-mb (rf)
max.
max.
50 K/W
15 K/W
July 1986
3
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