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MAX2602 PDF даташит

Спецификация MAX2602 изготовлена ​​​​«Maxim Integrated» и имеет функцию, называемую «1W RF Power Transistors».

Детали детали

Номер произв MAX2602
Описание 1W RF Power Transistors
Производители Maxim Integrated
логотип Maxim Integrated логотип 

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MAX2602 Даташит, Описание, Даташиты
19-1185; Rev 3; 9/08
EVAALVUAAILTAIOBNLEKIT
3.6V, 1W RF Power Transistors
for 900MHz Applications
General Description
The MAX2601/MAX2602 are RF power transistors opti-
mized for use in portable cellular and wireless equipment
that operates from three NiCd/NiMH cells or one Li-Ion
cell. These transistors deliver 1W of RF power from a
3.6V supply with efficiency of 58% when biased for con-
stant-envelope applications (e.g., FM or FSK). For NADC
(IS-54) operation, they deliver 29dBm with -28dBc ACPR
from a 4.8V supply.
The MAX2601 is a high-performance silicon bipolar RF
power transistor. The MAX2602 includes a high-
performance silicon bipolar RF power transistor, and a
biasing diode that matches the thermal and process
characteristics of the power transistor. This diode is
used to create a bias network that accurately controls
the power transistor’s collector current as the tempera-
ture changes.
The MAX2601/MAX2602 can be used as the final stage
in a discrete or module power amplifier. Silicon bipolar
technology eliminates the need for voltage inverters
and sequencing circuitry, as required by GaAsFET
power amplifiers. Furthermore, a drain switch is not
required to turn off the MAX2601/MAX2602. This
increases operating time in two ways: it allows lower
system end-of-life battery voltage, and it eliminates the
wasted power from a drain-switch device.
The MAX2601/MAX2602 are available in thermally
enhanced, 8-pin SO packages, which are screened to
the extended temperature range (-40°C to +85°C).
____________________________Features
Low Voltage: Operates from 1 Li-Ion or
3 NiCd/NiMH Batteries
DC-to-Microwave Operating Range
1W Output Power at 900MHz
On-Chip Diode for Accurate Biasing (MAX2602)
Low-Cost Silicon Bipolar Technology
Does Not Require Negative Bias or Supply Switch
High Efficiency: 58%
PART
MAX2601ESA
MAX2602ESA
Ordering Information
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
8 SOIC
8 SOIC
________________________Applications
Narrow-Band PCS (NPCS)
915MHz ISM Transmitters
Microcellular GSM (Power Class 5)
AMPS Cellular Phones
Digital Cellular Phones
Two-Way Paging
CDPD Modems
Land Mobile Radios
TOP VIEW
Pin Configurations
C1
E2
E3
B4
MAX2601
PSOPII
8 C C1
7 E E2
6 E BIAS 3
5 B B4
MAX2602
PSOPII
8C
7E
6E
5B
Typical Application Circuit appears at end of data sheet.
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
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MAX2602 Даташит, Описание, Даташиты
3.6V, 1W RF Power Transistors
for 900MHz Applications
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage, Shorted Base (VCES) ....................17V
Emitter Base Reverse Voltage (VEBO)...................................2.3V
BIAS Diode Reverse Breakdown Voltage (MAX2602) ..........2.3V
Average Collector Current (IC)........................................1200mA
Continuous Power Dissipation (TA = +70°C)
SOIC (derate 80mW/°C above +70°C) (Note 1) .............6.4W
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +165°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(TA = TMIN to TMAX, unless otherwise noted.)
PARAMETER
SYMBOL
Collector-Emitter Breakdown
Voltage
BVCEO
BVCES
IC < 100µA
Collector-Emitter Sustaining
Voltage
LVCEO IC = 200mA
CONDITIONS
Open base
Shorted base
Collector-Base Breakdown
Voltage
DC Current Gain
Collector Cutoff Current
Output Capacitance
BVCBO
hFE
ICES
COB
IC < 100µA, emitter open
IC = 250mA, VCE = 3V
VCE = 6V, VBE = 0V
VCB = 3V, IE = 0mA, f = 1MHz
MIN TYP MAX UNITS
15
V
15
5.0 V
15
100
0.05 1.5
9.6
V
µA
pF
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, VCC = 3.6V, VBB = 0.750V, ZLOAD = ZSOURCE = 50Ω, POUT = 30dBm, f = 836MHz, TA = +25°C, unless oth-
erwise noted.)
PARAMETER
Frequency Range
Base Current
Harmonics
Power Gain
Collector Efficiency
SYMBOL
f
IB
2fo, 3fo
η
(Note 2)
CONDITIONS
VCC = 3.6V, POUT = 30dBm
VCC = 3.0V, POUT = 29dBm
POUT = 30dBm
No modulation
MIN TYP MAX UNITS
DC 1 GHz
4.2 mA
-43 dBc
dBc
-42
11.6 dB
58 %
Stability under Continuous
Load Mismatch Conditions
VSWR VCC = 5.5V, all angles (Note 3)
8:1
Two-Tone IMR
Noise Figure
IM3 POUT = +30dBm total power, f1 = 835MHz,
IM5 f2 = 836MHz
NF VBB = 0.9V
-16
dBc
-25
3.3 dB
Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric
degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.
2 _______________________________________________________________________________________
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MAX2602 Даташит, Описание, Даташиты
3.6V, 1W RF Power Transistors
for 900MHz Applications
__________________________________________Typical Operating Characteristics
(Test Circuit of Figure 1, input/output matching networks optimized for specific measurement frequency, VCC = 3.6V, VBB = 0.750V,
POUT = 30dBm, ZLOAD = ZSOURCE = 50Ω, f = 836MHz, TA = +25°C, unless otherwise noted.)
COLLECTOR CURRENT
1.0
0.8 VBB = 1.00V
0.6 VBB = 0.95V
0.4 VBB = 0.90V
0.2
0
0
VBB = 0.85V
VBB = 0.80V
1234 56
VCE (V)
TWO-TONE OUTPUT POWER AND IM3
vs. COLLECTOR CURRENT
31
POUT, IM3, AND IM5
ARE RMS COMPOSITE
TWO-TONE POWER LEVELS
30
POUT
20
19
29 18
IM3
28 17
TWO-TONE OUTPUT POWER, IM3, IM5
vs. INPUT POWER
35
POUT, IM3, AND IM5
ARE RMS COMPOSITE
TWO-TONE POWER
25 LEVELS
POUT
IM3
15
IM5
5
27
0.4
0.5 0.6 0.7
ICC (A)
16
0.8
-5
5
10 15 20
INPUT POWER (dBm)
25
TWO-TONE OUTPUT POWER, IM3, IM5
vs. INPUT POWER (f = 433MHz)
35
POUT
25
POUT, IM3, AND IM5
ARE RMS COMPOSITE
15 TWO-TONE
POWER LEVELS
IM3
IM5
5
-5
5
10 15 20
INPUT POWER (dBm)
25
ACPR vs. OUTPUT POWER
(IS-54 π/4 DQPSK MODULATION, VBB = 0.85V)
-20
-22 3.0V
-24
-26
3.6V
-28
-30
-32 4.2V
-34
4.8V
-36
-38
-40
10
15 20 25 30
OUTPUT POWER (dBm)
35
COLLECTOR EFFICIENCY vs. OUTPUT POWER
(IS-54 π/4 DQPSK MODULATION, VBB = 0.85V)
60
POUT, IM3, AND IM5
50
ARE RMS COMPOSITE
TWO-TONE POWER
LEVELS
40
3.0V
30 3.6V 4.2V
20
4.8V
10
0
10
15 20 25 30
OUTPUT POWER (dBm)
35
______________________________________________________________Pin Description
PIN
MAX2601
1, 8
2, 3, 6, 7, Slug
MAX2602
1, 8
2, 6, 7, Slug
—3
4, 5 4, 5
NAME
FUNCTION
C
E
BIAS
B
Transistor Collector
Transistor Emitter
Anode of the Biasing Diode that matches the thermal and process char-
acteristics of the power transistor. Requires a high-RF-impedance, low-
DC-impedance (e.g., inductor) connection to the transistor base (Pin 4).
Current through the biasing diode (into Pin 3) is proportional to 1/15 the
collector current in the transistor.
Transistor Base
_______________________________________________________________________________________ 3
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