EMZ51 PDF даташит
Спецификация EMZ51 изготовлена «ROHM Semiconductor» и имеет функцию, называемую «General Purpose Transister». |
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Детали детали
Номер произв | EMZ51 |
Описание | General Purpose Transister |
Производители | ROHM Semiconductor |
логотип |
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EMZ51
General Purpose Transister (dual transistors)
<For Tr1(NPN)>
Parameter
VCEO
IC
<For Tr2(PNP)>
Parameter
VCEO
IC
Value
20V
200mA
Value
-20V
-200mA
lOutline
EMT6
EMZ51
(SC-107C)
lFeatures
1) General Purpose.
2) 2SAR522 and 2SCR522 chips in one package.
3) Transister elements are independent, eliminating
interface.
4) Mounting cost and area can be cut in half.
5) Lead Free/RoHS Compliant.
lInner circuit
Datasheet
lApplication
Switching, LED driver
lPackaging specifications
Part No.
Package
Package
size
EMZ51
EMT6
1616
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2R 180
8
8000
Z51
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/9
20130905 - Rev.002
http://www.Datasheet4U.com
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EMZ51
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2 *3
Tj
Tstg
Tr1(NPN) Tr2(PNP)
20 -20
20 -20
5 -5
200 -200
400 -400
150(Total)
150
-55 to +150
Unit
V
V
V
mA
mA
mW
℃
℃
lElectrical characteristics (Ta = 25°C) <For Tr1(NPN)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
IC = 50μA
IC = 1mA
IE = 50μA
VCB = 20V
VEB = 5V
IC = 100mA, IB = 10mA
VCE = 6V, IC = 1mA
VCE = 10V, IE = -10mA,
f = 100MHz
VCB = 10V, IE = 0A,
f = 1MHz
Values
Min. Typ. Max.
20 -
-
20 -
-
5- -
- - 0.1
- - 0.1
- 0.12 0.30
120 - 560
- 400 -
Unit
V
V
V
μA
μA
V
-
MHz
- 1.6 - pF
lElectrical characteristics (Ta = 25°C) <For Tr2(PNP)>
Parameter
Symbol
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
IC = -50μA
IC = -1mA
IE = -50μA
VCB = -20V
VEB = -5V
IC = -100mA, IB = -10mA
VCE = -6V, IC = -1mA
VCE = -10V, IE = 10mA,
f = 100MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
*1 Pw=1ms Single Pulse
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
Values
Min. Typ. Max.
-20 -
-
-20 -
-
-5 -
-
- - -0.1
- - -0.1
- -0.12 -0.30
120 - 560
- 350 -
-2-
Unit
V
V
V
μA
μA
V
-
MHz
pF
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/9
20130905 - Rev.002
http://www.Datasheet4U.com
No Preview Available ! |
EMZ51
lElectrical characteristic curves(Ta=25℃) <For Tr1(NPN)>
Datasheet
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current(I)
Fig.4 DC Current Gain vs. Collector
Current(II)
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/9
20130905 - Rev.002
http://www.Datasheet4U.com
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DataSheet26.com | 2020 | Контакты | Поиск |