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VT6X1 PDF даташит

Спецификация VT6X1 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Power management».

Детали детали

Номер произв VT6X1
Описание Power management
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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VT6X1 Даташит, Описание, Даташиты
VT6X1 / EMX51
Power management (dual transistors)
Datasheet
Parameter
VCEO
IC
 
Tr1 and Tr2
20V
200mA
 
lFeatures
1) General Purpose.
2) Two 2SCR522 chips in one package.
3) Transister elements are independent, eliminating
interface.
4) Mounting cost and area can be cut in half.
5) Lead Free/RoHS Compliant.
lOutline
VMT6
EMT6
  
VT6X1
EMX51
(SC-107C)
                            
lInner circuit
lApplication
Switching, LED driver
lPackaging specifications
Part No.
Package
Package
size
VT6X1
EMX51
 
VMT6
EMT6
 
1212
1616
 
                                          
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2R 180
T2R 180
  
8
8
 
8000
8000
 
X1
X51
 
                                                                                        
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/7
20130905 - Rev.002
http://www.Datasheet4U.com









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VT6X1 Даташит, Описание, Даташиты
VT6X1 / EMX51
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
VT6X1
EMX51
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2 *3
Tj
Tstg
Values
20
20
5
200
400
150
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
lElectrical characteristics (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
BVEBO
ICBO
IEBO
VCE(sat)
hFE
IE = 50μA
VCB = 20V
VEB = 5V
IC = 100mA, IB = 10mA
VCE = 6V, IC = 1mA
Transition frequency
fT
VCE = 10V, IE = -10mA,
f = 100MHz
Values
Min. Typ. Max.
20 -
-
20 -
-
5- -
- - 0.1
- - 0.1
- 0.12 0.30
120 - 560
- 400 -
Unit
V
V
V
μA
μA
V
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
- 1.6 - pF
*1 Pw=1ms Single Pulse
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
                                            
 
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/7
                                        
20130905 - Rev.002
http://www.Datasheet4U.com









No Preview Available !

VT6X1 Даташит, Описание, Даташиты
VT6X1 / EMX51
lElectrical characteristic curves(Ta=25)
<For Tr1 and Tr2 in common>
Fig.1 Grounded Emitter Propagation
Characteristics
      Datasheet
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current(I)
Fig.4 DC Current Gain vs. Collector
Current(II)
                                                                                          
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/7
20130905 - Rev.002
http://www.Datasheet4U.com










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