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VT6T1 PDF даташит

Спецификация VT6T1 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «General purpose transister».

Детали детали

Номер произв VT6T1
Описание General purpose transister
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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VT6T1 Даташит, Описание, Даташиты
VT6T1 / EMT51
General purpose transister (isolated dual transistors)
Datasheet
Parameter
VCEO
IC
 
Tr1 and Tr2
-20V
-200mA
 
lFeatures
1) General Purpose.
2) Two 2SAR522 chips in one package.
3) Transister elements are independent, eliminating
interface.
4) Mounting cost and area can be cut in half.
5) Lead Free/RoHS Compliant.
lOutline
VMT6
EMT6
  
VT6T1
EMT51
(SC-107C)
                            
lInner circuit
lApplication
Switching, LED driver
lPackaging specifications
Part No.
Package
Package
size
VT6T1
EMT51
 
VMT6
EMT6
 
1212
1616
 
                                          
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2R 180
T2R 180
  
8
8
 
8000
8000
 
T1
T51
 
                                                                                        
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/7
20130905 - Rev.002
http://www.Datasheet4U.com









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VT6T1 Даташит, Описание, Даташиты
VT6T1 / EMT51
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
VT6T1
EMT51
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2 *3
Tj
Tstg
Values
-20
-20
-5
-200
-400
150
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
lElectrical characteristics (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = -50μA
-20 -
-
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
-20 -
-
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
BVEBO
ICBO
IEBO
VCE(sat)
hFE
IE = -50μA
VCB = -20V
VEB = -5V
IC = -100mA, IB = -10mA
VCE = -6V, IC = -1mA
-5
-
-
-
120
-
-
-
-0.12
-
-
-0.1
-0.1
-0.30
560
Transition frequency
fT
VCE = -10V, IE = 10mA,
f = 100MHz
-
350
-
Unit
V
V
V
μA
μA
V
-
MHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
- 1.6 - pF
*1 Pw=1ms Single Pulse
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
                                            
 
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/7
                                        
20130905 - Rev.002
http://www.Datasheet4U.com









No Preview Available !

VT6T1 Даташит, Описание, Даташиты
VT6T1 / EMT51
lElectrical characteristic curves(Ta=25)
<For Tr1 and Tr2 in common>
Fig.1 Grounded Emitter Propagation
Characteristics
      Datasheet
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current(I)
Fig.4 DC Current Gain vs. Collector
Current(II)
                                                                                          
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/7
20130905 - Rev.002
http://www.Datasheet4U.com










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