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EMD53 PDF даташит

Спецификация EMD53 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «Complex Digital Transistors».

Детали детали

Номер произв EMD53
Описание Complex Digital Transistors
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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EMD53 Даташит, Описание, Даташиты
EMD53
Complex Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
<For DTr1(NPN)>
Parameter
VCC
IC(MAX.)
R1
R2
<For DTr2(PNP)>
Parameter
VCC
IC(MAX.)
R1
R2
Value
50V
100mA
10kΩ
10kΩ
Value
-50V
-100mA
10kΩ
10kΩ
lOutline
EMT6
 
  
EMD53
(SC-107C)
              
lFeatures
1) DTA014E and DTC014E chip in a EMT6
package.
2) Transister elements are independent, eliminating
interface.
3) Mounting cost and area can be cut in half.
4) Lead Free/RoHS Compliant.
lInner circuit
 
 
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Part No.
Package
Package
size
EMD53
 
EMT6
 
1616
 
   
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
T2R 180
  
8
 
8000
 
   
Marking
D53
 
                                                                                        
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/7
20131001 - Rev.003
http://www.Datasheet4U.com









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EMD53 Даташит, Описание, Даташиты
EMD53
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol DTr1(NPN) DTr2(PNP) Unit
VCC
VIN
IO
IC(MAX)*1
PD*2 *3
Tj
Tstg
50 -50 V
40 to -10 -40 to 10 V
50 -50 mA
100 -100 mA
150(Total)
mW/Total
150
-55 to +150
lElectrical characteristics (Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
f
*1
T
VCC = 5V, IO = 0.1mA
VO = 0.3V, IO = 5mA
IO / II = 5mA / 0.5mA
VI = 5V
VCC = 50V, VI = 0V
VO = 10V, IO = 5mA
-
-
VCE = 10V, IE = -5mA,
f = 100MHz
Values
Min. Typ. Max.
- - 0.8
2.6 -
-
- 0.05 0.15
- - 0.88
- - 0.5
35 -
-
7 10 13
0.8 1 1.2
Unit
V
V
mA
μA
-
-
- 250 - MHz
lElectrical characteristics (Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -0.1mA
VO = -0.3V, IO = -5mA
IO / II = -5mA / -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -10V, IO = -5mA
-
-
Transition frequency
f
*1
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Characteristics of built-in transistorEach
*2 terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
Values
Min. Typ. Max.
- - -0.8
-2.6 -
-
- -0.07 -0.15
- - -0.88
- - -0.5
35 -
-
7 10 13
0.8 1 1.2
Unit
V
V
mA
μA
-
-
- 250 - MHz
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2/7
20131001 - Rev.003
http://www.Datasheet4U.com









No Preview Available !

EMD53 Даташит, Описание, Даташиты
EMD53
lElectrical characteristic curves(Ta=25°C) <For DTr1(NPN)>
      Datasheet
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 Output current vs. output voltage
Fig.4 DC current gain vs. output current
                                                                                          
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/7
20131001 - Rev.003
http://www.Datasheet4U.com










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