Datasheet CP788X Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	CP788X	PNP - Low Noise Amplifier Transistor Chip PROCESS Small Signal Transistor CP788X PNP - Low Noise Amplifier Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 91,469 PRINCIPAL DEVICE TYPE CMKT5087 EP	centralsemi	transistor

CP7 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	CP704	Small Signal Transistors NPN - Amp Switch Transistor Chip Small Signal Transistors PROCESS CP704 PNP - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 23,450 PRINCIPAL DEVICE TY	Central Semiconductor	transistor
2	CP704	Small Signal Transistors PNP - High Current Transistor Chip Small Signal Transistors PROCESS CP704 PNP - High Current Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 23,450 PRINCIPAL DEVICE TY	Central Semiconductor	transistor
3	CP705	Small Signal Transistor PNP - High Current Transistor Chip PROCESS Small Signal Transistor PNP - High Current Transistor Chip CP705 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH	Central Semiconductor	transistor
4	CP707	Small Signal Transistor PNP - Darlington Transistor Chip PROCESS Small Signal Transistor PNP - Darlington Transistor Chip CP707 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WA	Central Semiconductor	transistor
5	CP709	Power Transistor PNP - Low Saturation Transistor Chip PROCESS Power Transistor CP709 Central TM PNP - Low Saturation Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFE	Central Semiconductor	transistor
6	CP710	Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS Small Signal Transistor PNP - High Voltage Transistor Chip CP710 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH	Central Semiconductor	transistor
7	CP710V	Small Signal Transistor PNP - High Voltage Transistor Chip PROCESS Small Signal Transistor CP710V PNP - High Voltage Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 25,214 PRINCIPAL DEVICE TY	Central Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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