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P55N06 PDF даташит

Спецификация P55N06 изготовлена ​​​​«Fairchild Semiconductor» и имеет функцию, называемую «FDP55N06».

Детали детали

Номер произв P55N06
Описание FDP55N06
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 

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P55N06 Даташит, Описание, Даташиты
FDP55N06 / FDPF55N06
N-Channel UniFETTM MOSFET
60 V, 55 A, 22 m
Features
• RDS(on) = 22 m@VGS = 10 V, ID = 27.5 A
• Low Gate Charge ( Typ. 30 nC)
• Low Crss ( Typ. 60 pF)
• 100% Avalanche Tested
October 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
GDS
TO-220
G
GDS TO-220F
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max,
FDP55N06
FDPF55N06
60
55 55 *
34.8 34.8 *
220 220 *
± 25
480
55
11.4
4.5
114 48
0.9 0.4
-55 to +150
300
FDP55N06
1.1
0.5
62.5
FDPF55N06
2.58
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDP55N06 / FDPF55N06 Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com









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P55N06 Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking
FDP55N06
FDPF55N06
Device
FDP55N06
FDPF55N06
Package
TO-220
TO-220F
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 27.5 A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 25 V, ID = 27.5 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 30 V, ID = 55 A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 48 V, ID = 55A,
VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 55 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 55 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, IAS = 55A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 55A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
Min
60
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.05
--
--
--
--
--
0.018
33
1160
375
60
30
130
70
95
30
6.5
7.5
--
--
--
40
55
Max Units
-- V
-- V/°C
1
10
100
-100
µA
µA
nA
nA
4.0
0.022
--
V
S
1510
490
90
pF
pF
pF
65 ns
265 ns
150 ns
195 ns
37 nC
-- nC
-- nC
55 A
220 A
1.4 V
-- ns
-- µC
©2005 Fairchild Semiconductor Corporation
FDP55N06 / FDPF55N06 Rev. C0
2
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com









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P55N06 Даташит, Описание, Даташиты
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
102 Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
* Notes :
1. 250µs Pulse Test
2. TC = 25oC
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.05
0.04
0.03
0.02
0
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
25 50 75 100 125 150 175 200
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2500
2000
1500
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
500
Crss
* Note :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
102
150oC
101 25oC
-55oC
100
2
* otes :
1. VDS = 30V
2. 250µs Pulse Test
46
VGS, Gate-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
150oC
25oC
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
8
VDS = 30V
VDS = 48V
6
4
2
* Note : ID = 55A
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
©2005 Fairchild Semiconductor Corporation
FDP55N06 / FDPF55N06 Rev. C0
3
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com










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