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STF26NM60 PDF даташит
| Спецификация STF26NM60 изготовлена «STMicroelectronics» и имеет функцию, называемую «N-channel Power MOSFET». |
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Детали детали
| Номер произв | STF26NM60 |
| Описание | N-channel Power MOSFET |
| Производители | STMicroelectronics |
| логотип |  |
23 Pages
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STB26NM60N, STF26NM60, STI26NM60N,
STP26NM60N, STW26NM60N
N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET
in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
TAB
Type
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
VDSS
600 V
600 V
600 V
600 V
600 V
RDS(on)
max
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
ID
20 A
20 A
20 A
20 A
20 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
3
2
1
TO-220FP
TAB
123
I²PAK
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Application
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET applies a new vertical structure to the
company’s strip layout to yield a device with one
of the world’s lowest on-resistance and gate
charge, making it suitable for the most demanding
high-efficiency converters.
Figure 1. Internal schematic diagram
$4!"
'
3
3#
Table 1. Device summary
Order codes
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
Marking
26NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2012
This is information on a product in full production.
Doc ID 15642 Rev 4
1/23
www.st.com
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Contents
Contents
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves)
............................ 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/23 Doc ID 15642 Rev 4
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STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, I²PAK,
TO-220, TO-247
TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
dv/dt (3)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Peak diode recovery voltage slope
20
12.6
80
140
1.12
600
± 25
15
20(1)
12.6 (1)
80(1)
35
0.28
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS
2500
–55 to 150
150
Unit
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-247 TO-220 I²PAK D²PAK TO-220FP
Rthj-case
Thermal resistance junction-
case max
Rthj-amb
Thermal resistance junction-
ambient max
Rthj-pcb(1)
Thermal resistance junction-pcb
max
50
0.89
62.5
3.6 °C/W
62.5 °C/W
30 °C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Doc ID 15642 Rev 4
3/23
Free Datasheet http://www.Datasheet4U.com
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| Номер в каталоге | Описание | Производители |
| STF26NM60 | N-channel Power MOSFET | STMicroelectronics |
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