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STW26NM60N PDF даташит
| Спецификация STW26NM60N изготовлена «STMicroelectronics» и имеет функцию, называемую «N-channel Power MOSFET». |
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Детали детали
| Номер произв | STW26NM60N |
| Описание | N-channel Power MOSFET |
| Производители | STMicroelectronics |
| логотип |  |
13 Pages
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STW26NM60N
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs
in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Order code
STW26NM60N
VDS
600 V
RDS(on) max
0.165 Ω
ID
20 A
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Figure 1. Internal schematic diagram
'
*
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6
6&
Order code
STW26NM60N
Table 1. Device summary
Marking
Packages
26NM60N
TO-247
Packaging
Tube
September 2013
This is information on a product in full production.
DocID025246 Rev 1
1/13
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Contents
Contents
STW26NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW26NM60N
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(1)
IDM Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
(2)
dv/dt Peak diode recovery voltage slope
600
± 30
20
12.6
80
140
1.12
15
Tstg Storage temperature
–55 to 150
Tj Max. operating junction temperature
150
1. Pulse width limited by safe operating area.
2. ISD ≤ 20 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Value
0.89
50
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Avalanche current, repetitive or not-
IAS repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy
EAS
(starting TJ=25 °C, ID=IAS, VDD=50 V)
6
610
Unit
V
V
A
A
A
W
W/°C
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
DocID025246 Rev 1
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