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7NK80Z PDF даташит
| Спецификация 7NK80Z изготовлена «STMicroelectronics» и имеет функцию, называемую «STP7NK80Z». |
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Детали детали
| Номер произв | 7NK80Z |
| Описание | STP7NK80Z |
| Производители | STMicroelectronics |
| логотип |  |
16 Pages
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STP7NK80Z - STP7NK80ZFP
STB7NK80Z - STB7NK80Z-1
N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
STB7NK80Z-1
VDSS
(@Tjmax)
800V
800V
800V
800V
RDS(on)
< 1.8Ω
< 1.8Ω
< 1.8Ω
< 1.8Ω
ID
5.2A
5.2A
5.2A
5.2A
■ Extremely high dv/dt capability
■ 100% avalange tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
Internal schematic diagram
Order codes
Part number
STP7NK80Z
STP7NK80ZFP
STB7NK80ZT4
STB7NK80Z-1
Marking
P7NK80Z
P7NK80ZFP
B7NK80Z
B7NK80Z-1
Package
TO-220
TO-220FP
D²PAK
I²PAK
Packaging
Tube
Tube
Tape e reel
Tube
October 2006
Rev 5
1/18
www.st.com
18
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Contents
Contents
STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
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STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
TO-220 / D²PAK
I²PAK
TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (3) Peak diode recovery voltage slope
5.2
3.3
20.8
125
1
800
± 30
4000
4.5
5.2 (1)
3.3 (1)
20.8(1)
30
0.24
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s; Tc= 25°C)
--
2500
Tj Max operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤5.2 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
TO-220/D2PAK
I2PAK
TO-220FP
1 4.2
62.5
300
Unit
°C/W
°C/W
°C
3/18
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| 7NK80Z | STP7NK80Z | STMicroelectronics |
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