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50N60 PDF даташит
| Спецификация 50N60 изготовлена «IXYS» и имеет функцию, называемую «IXRH50N60». |
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Детали детали
| Номер произв | 50N60 |
| Описание | IXRH50N60 |
| Производители | IXYS |
| логотип |  |
2 Pages
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Advanced Technical Information
IGBT with Reverse
Blocking capability
IXRH 50N80
IXRH 50N60
VCES = 600 / 800V
IC25 = 60 A
VCE(sat) = 2.5 V
tf = 75 ns
C TO-247 AD
GG
C
E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
IGBT
Features
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
IRM
t
rr
R
thJC
Conditions
TVJ = 25°C to 150°C
IXRH 50N80
IXRH 50N60
TC = 25°C
TC = 90°C
VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
±800
±600
V
V
± 20 V
60 A
40 A
80 A
500 V
300 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 40 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 2 mA; VGE = VCE
VCE = 0.8 VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 500 V; IC = 40 A
VGE = 0/15 V; RG = 22 Ω
2.5 3.1 V
3.0 V
4 8V
0.4 mA
3.0 mA
500 nA
80 ns
100 ns
380 ns
75 ns
3.6 mJ
2.1 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 500V; VGE = 15 V; IC = 40 A
IF = 40 A; diC/dt = -400 A/µs; TVJ = 125°C
V = -500 V; V = 15 V
CE GE
4 nF
150 nC
58 A
840 ns
0.42 K/W
q IGBT with NPT (non punch through)
structure
q reverse blocking capability indepen-
dent from gate voltage
- function of series diode monolithically
integrated
- no external series diode required
- soft reverse recovery
q positive temperature coefficient of
saturation voltage
- optimum current distribution
when paralleled
q Epoxy of TO 247 package meets
UL 94V-0
Applications
converters requiring reverse blocking
capability:
- current source inverters
- matrix converters
- bi-directional switches
- resonant converters
- induction heating
- auxiliary switches for soft switching
in the main current path
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Free Datasheet http://www.Datasheet4U.com
No Preview Available ! |
Component
Symbol
TVJ
Tstg
Md
FC
Conditions
mounting torque
mounting force with clip
Symbol
Conditions
R
thCH
Weight
with heatsink compound
IXRH 50N80
IXRH 50N60
Maximum Ratings
-55...+150
-55...+125
°C
°C
0.8 - 1.2
20...120
Nm
N
TO-247 AD Outline
Characteristic Values
min. typ. max.
0.25 K/W
6g
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
2-2
Free Datasheet http://www.Datasheet4U.com
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