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B1443 PDF даташит
| Спецификация B1443 изготовлена «ROHM Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SB1443». |
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Детали детали
| Номер произв | B1443 |
| Описание | PNP Transistor - 2SB1443 |
| Производители | ROHM Semiconductor |
| логотип |  |
3 Pages
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Power Transistor (−50V, −2A)
2SB1443
Features
1) Low saturation voltage.
VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA.
2) Excellent DC current gain characteristics.
Dimensions (Unit : mm)
ATV
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−50
−50
−6
−2
−5
1
150
−55 to +150
∗1 Single pulse, Pw=10ms
∗2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A (DC)
A (Pulse) ∗1
W ∗2
°C
°C
(1) (2) (3)
(1) Emitter
(2) Collector
(3) Base
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
2SB1443
ATV
Q
−
TV2
2500
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
−50 − − V IC=−50μA
−50 − − V IC=−1mA
−6 − − V IE=−50μA
−
−
−0.1
μA VCB=−50V
−
−
−0.1
μA VEB=−5V
− −0.15 −0.35 V IC/IB=−1A/−50mA
120 − 270 − VCE/IC=−2V/−0.5A
− 200 − MHz VCE=−2V, IE=0.5A, f=100MHz
− 36 − pF VCB=−10V, IE=0A, f=1MHz
∗
∗
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○c 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev.B
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2SB1443
Electrical characteristics curves
2.0
Ta=25°C
1.8
1.6
1.4
1.2
1
800m
lB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
600m
3mA
400m
200m
2mA
1mA
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded Emitter Output
Characteristics
-1
-0.5
-0.2
-0.1
-0.05
-0.02
lC/lB=20
Ta=100°C
Ta=25°C
Ta=−40°C
-0.01
-1m-2m-5m-0.0-10.02-0.0-50.-1 0.2-0.5 -1 -2 -5-10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current
−10 VCE=2V
−5
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
−5m
−2m
−1m
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded Emitter Propagation
Characteristics
Data Sheet
5000
2000
1000
500
200
100
50
VCE=2V
Ta=100°C
Ta=25°C
Ta=−40°C
20
10
5
-1m-2m-5m-0.0-10.02-0.0-50.-1 0.2-0.5 -1 -2 -5-10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current
10
IC Max (PULSE)
1
100m
10m
Ta=25°C
Single
nonrepetitive
1m pulse
0.01 0.1
1
10 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.5 Safe Operating Area
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○c 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.06 - Rev.B
Free
Datashe
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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