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B1434 PDF даташит

Спецификация B1434 изготовлена ​​​​«Panasonic Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SB1434».

Детали детали

Номер произв B1434
Описание PNP Transistor - 2SB1434
Производители Panasonic Semiconductor
логотип Panasonic Semiconductor логотип 

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B1434 Даташит, Описание, Даташиты
Transistors
2SB1434
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD2177
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
Low collector to emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
50
50
5
3
2
1
150
55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
0.65 max.
+0.1
0.450.05
2.5±0.5 2.5±0.5
123
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.45+−00..105
0.65
max.
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = −20 V, IE = 0
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCE = −2 V, IC = −200 mA
VCE = −2 V, IC = −1 A
IC = −1 A, IB = −50 mA
IC = −1 A, IB = −50 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
50
50
5
120
60
Note) *1: Pulse measurement
*2: Rank classification
Rank
R
S No-rank
hFE1 120 to 240 170 to 340 120 to 340
Product of no-rank is not classified and have no indication for rank.
Typ Max
0.1
340
0.2 0.3
0.85 1.2
110
40 60
Unit
µA
V
V
V
V
V
MHz
pF
1
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B1434 Даташит, Описание, Даташиты
2SB1434
Transistors
PC Ta
1.2
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness.
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
2.4
Ta = 25°C
2.0
1.6
1.2
0.8
0.4
IB = −8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
VCE(sat) IC
10 IC / IB = 20
3
1
0.3
0.1
0.03
0.01
Ta = 100°C
25°C
25°C
0.003
0.001
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
VBE(sat) IC
100
IC / IB = 20
30
10
3
1
0.3
0.1
25°C Ta = −25°C
75°C
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE IC
500
VCE = −2 V
400
300
Ta = 100°C
200 25°C
25°C
100
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT IE
200 VCB = −10 V
Ta = 25°C
160
120
80
40
0
1 3 10 30 100
Emitter current IE (mA)
Cob VCB
240
IE = 0
f = 1 MHz
200 Ta = 25°C
160
120
80
40
0
1 3 10 30 100
Collector to base voltage VCB (V)
2
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