![]() |
B1434 PDF даташит
Спецификация B1434 изготовлена «Panasonic Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SB1434». |
|
Детали детали
Номер произв | B1434 |
Описание | PNP Transistor - 2SB1434 |
Производители | Panasonic Semiconductor |
логотип | ![]() |
2 Pages

No Preview Available ! |

Transistors
2SB1434
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD2177
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
I Features
• Low collector to emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
−50
−50
−5
−3
−2
1
150
−55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
0.65 max.
+0.1
0.45−0.05
2.5±0.5 2.5±0.5
123
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.45+−00..105
0.65
max.
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = −20 V, IE = 0
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCE = −2 V, IC = −200 mA
VCE = −2 V, IC = −1 A
IC = −1 A, IB = −50 mA
IC = −1 A, IB = −50 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
−50
−50
−5
120
60
Note) *1: Pulse measurement
*2: Rank classification
Rank
R
S No-rank
hFE1 120 to 240 170 to 340 120 to 340
Product of no-rank is not classified and have no indication for rank.
Typ Max
− 0.1
340
− 0.2 − 0.3
− 0.85 −1.2
110
40 60
Unit
µA
V
V
V
V
V
MHz
pF
1
Free Datasheet http://www.Datasheet4U.com

No Preview Available ! |

2SB1434
Transistors
PC Ta
1.2
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness.
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
−2.4
Ta = 25°C
−2.0
−1.6
−1.2
− 0.8
− 0.4
IB = −8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
VCE(sat) IC
−10 IC / IB = 20
−3
−1
− 0.3
− 0.1
− 0.03
− 0.01
Ta = 100°C
25°C
−25°C
− 0.003
− 0.001
− 0.01 − 0.03 − 0.1 − 0.3 −1 −3
Collector current IC (A)
−10
VBE(sat) IC
−100
IC / IB = 20
−30
−10
−3
−1
− 0.3
− 0.1
25°C Ta = −25°C
75°C
− 0.03
− 0.01
− 0.01 − 0.03 − 0.1 − 0.3 −1 −3
Collector current IC (A)
−10
hFE IC
500
VCE = −2 V
400
300
Ta = 100°C
200 25°C
−25°C
100
0
− 0.01 − 0.03 − 0.1 − 0.3 −1 −3
Collector current IC (A)
−10
fT IE
200 VCB = −10 V
Ta = 25°C
160
120
80
40
0
1 3 10 30 100
Emitter current IE (mA)
Cob VCB
240
IE = 0
f = 1 MHz
200 Ta = 25°C
160
120
80
40
0
−1 −3 −10 −30 −100
Collector to base voltage VCB (V)
2
Free Datasheet http://www.Datasheet4U.com

Скачать PDF:
[ B1434.PDF Даташит ]
Номер в каталоге | Описание | Производители |
B1430 | PNP Transistor - 2SB1430 | ![]() SavantIC |
B1431 | PNP Silicon Epitaxial Transistor | ![]() NEC |
B1432 | PNP SILICON EPITAXIAL TRANSISTOR | ![]() NEC |
B1434 | PNP Transistor - 2SB1434 | ![]() Panasonic Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
![]() Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
![]() Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
![]() STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |