NE02135 PDF даташит

Спецификация NE02135 изготовлена «CEL» и имеет функцию, называемую «NPN SILICON HIGH FREQUENCY TRANSISTOR».

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Номер произв	NE02135
Описание	NPN SILICON HIGH FREQUENCY TRANSISTOR
Производители	CEL
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NEC's NPN SILICON HIGH NE021

FREQUENCY TRANSISTOR SERIES

FEATURES

• HIGH INSERTION GAIN: 18.5 dB at 500 MHz

• LOW NOISE FIGURE: 1.5 dB at 500 MHz

• HIGH POWER GAIN: 12 dB at 2 GHz

• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,

2 GHz Gain Compression

DESCRIPTION

NEC's NE021 series of NPN silicon transistors provides eco-

nomical solutions to wide ranges of amplifier and oscillator

problems. Low noise and high current capability provide low

intermodulation distortion. The NE021 series is available as a

chip or in several package styles. The series uses the NEC gold,

platinum, titanium, and platinum-silicide metallization system to

provide the utmost in reliability. NE02107 is available in both

common-base and common-emitter configurations and has

been qualified for high-reliability space applications.

NE02135

TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ.

(MHz)

NFOPT

(dB)

VCE = 10 V, IC = 5 mA

500 1.2 18.60

1000

1.5 13.82

1500

2.0 11.83

2000

2.4 9.36

2500

2.6 7.82

3000

3.6 7.51

3500

3.7 6.31

VCE = 10 V, IC = 20 mA

500 1.8 21.32

1000

1.9 16.15

1500

2.4 13.50

2000

2.9 11.02

2500

3.2 9.12

3000

3.9 8.10

3500

4.3 6.48

ΓOPT

MAG ANG

.36 69

.31 124

.50 165

.44 -175

.52 -161

.68 -141

.71 -139

.16 149

.33 169

.46 -179

.53 -167

.57 -154

.62 -139

.67 -134

Rn/50

.14

.12

.05

.06

.10

.14

.21

.15

.13

.09

.08

.14

.27

.42

00 (CHIP)

07/07B

33 (SOT 23 STYLE)

35 (MICRO-X)

39 (SOT 143 STYLE)

NE02139

TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ.

(MHz)

NFOPT

(dB)

VCE = 10 V, IC = 20 mA

500 1.8 17.5

1000

2.1 12.5

1500

2.3 9.5

2000

2.6 7.5

ΓOPT

MAG ANG

0.11 156

0.27 168

0.36 -156

0.43 -147

Rn/50

.20

.16

.18

.21

PLEASE NOTE:

The following part numbers from this datasheet are nonpromotive:

NE02100

NE02133

NE02139

The following part numbers from this datasheet are discontinued:

NE02107

NE02135

Please call sales office for details.

California Eastern Laboratories

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NE021 SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C)

SYMBOLS

PART NUMBER

EIAJ1 REGISTERED NUMBER

PACKAGE OUTLINE

PARAMETERS AND CONDITIONS

NE02100

00 (CHIP)

UNITS MIN TYP MAX

|S21|2

NFMIN

ICBO

IEBO

hFE

CCB

RTH (J-C)

RTH (J-A)

PT5

Gain Bandwidth Product at VCE = 10 V, IC = 20 mA

GHz

Insertion Power Gain at VCE = 10 V, IC = 20 mA,

f = 0.5 GHz

f = 1 GHz

f = 2 GHz

Minimum Noise Figure2 at

VCE = 10 V, IC = 3 mA, f = 0.5 GHz

VCE = 10 V, IC = 5 mA, f = 2 GHz

Collector Cutoff Current at VCB = 15 V, IE = 0

µA

Emitter Cutoff Current at VEB = 2 V, IC = 0

µA

Forward Current Gain at VCE = 10 V, IC = 20 mA

Collector to Base Capacitance4 at VCB = 10 V, IE = 0, f = 1 MHz pF

Thermal Resistance (Junction to Case)

°C/W

Thermal Resistance (Junction to Ambient)

°C/W

Total Power Dissipation

5.5

580

4.5

18.5

6.5

1.5

2.7 4.5

1.0

70 250

0.6 1.0

700

NE02107

07/07B3

MIN TYP MAX

4.5

18.5

5.5 6.5

1.5

2.7 4.5

1.0

20 70 250

0.6 1.0

500

350 700

ELECTRICAL CHARACTERISTICS (TA = 25°C)

SYMBOLS

|S21E|2

NFMIN

ICBO

IEBO

hFE

CCB

RTH (J-C)

RTH (J-A)

PT5

PART NUMBER

EIAJ1 REGISTERED NUMBER

PACKAGE OUTLINE

PARAMETERS AND CONDITIONS

Gain Bandwidth Product at VCE = 10 V,

IC = 20 mA

Insertion Power Gain at

VCE = 10 V, IC = 20 mA,

f = 0.5 GHz

f = 1 GHz

f = 2 GHz

Minimum Noise Figure6 at

VCE = 10 V, IC = 3 mA,

f = 0.5 GHz

VCE = 10 V, IC = 5 mA,

f = 1 GHz

f = 2 GHz

Collector Cutoff Current at VCB = 15 V,

IE = 0

Emitter Cutoff Current at VEB = 2 V,

IC = 0

Forward Current Gain at

VCE = 10 V, IC = 20 mA

Collector to Base Capacitance4 at

VCB = 10 V, IE = 0 , f = 1 MHz

Thermal Resistance (Junction to Case)

Thermal Resistance (Junction to Ambient)

Total Power Dissipation

UNITS

NE02133

2SC2351

MIN TYP MAX

NE02135

2SC2149

MIN TYP MAX

NE02139

2SC4092

MIN TYP MAX

GHz 4.5 4.5 4.5

dB 15

dB 9 10

dB 4 5

18.5

5 5.7

9 10

µA

°C/W

1.5 3

1.5

2.7 4.0

1.5

1.0 1.0 1.0

40 70 200 20 70 250 40 70 200

0.75 1.0

0.6 1.0

120

666 600

150 290

500

.75

500

200

Notes:

1. Electronic Industrial Association of Japan.

3. Common base electrical charactristics see S-Parameters.

5. Minimum dissipations based on RTH (J-A) for applications without effective

heat sink, maximum dissipations based on RTH (J-C) for applications with

effective heat sink.

2. Input and output are tuned for optimum noise figures.

4. CCB measurement employs a three-terminal capacitance bridge

incorporating a guard circuit. The emitter terminal shall be

connected to the guard terminal.

6. Output and Input are tuned for minimum noise figure.

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ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS RATINGS

VCBO Collector to Base Voltage

VCEO Collector to Emitter Voltage V

122

VEBO Emitter to Base Voltage

IC Collector Current

mA 70

TJ Junction Temperature

°C 2003

TSTG Storage Temperature

°C -65 to +2004

Notes:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Typical BVCER = 25 V for R ≤ 300 Ω.

3. Maximum TJ for the NE02133 and NE02139

is +150°C.

4. Maximum storage temperature for the NE02135 is -65 to

+150°C. Maximum storage temperature for the

NE02133 and NE02139 is -55 to 150°C.

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NE02133

DC POWER DERATING CURVES

400

1. Mounted On Al2O3 Substrate

(32x21x10mm) And Encapsulated

300

In Epoxy Resin (RTH (J-A) = 267˚C/W

2. Mounted On Al2O3 Substrate

(18x29x0.8mm) RTH(J-A) = 370˚C/W

3. Mounted On Al2O3 Substrate

(10x15x0.8mm) RTH(J-A) = 490˚C/W

200 2 4. Free Air, RTH(J-A) = 666˚C/W

100

0 50 100 150 200

Ambient Temperature, TA (°C)

VOLTAGE CURRENT

CHARACTERISTICS

50 VCE = 10 V

0.7

0.5

0.6 0.7

0.8 0.9

Base to Emitter Voltage, VBE (V)

NE021 SERIES

NE02100, NE02107

DC POWER DERATING CURVES

800

NE02100

RTH(J-C) = 70˚C/W

NE02107

600 RTH(J-C) = 90˚C/W

RTH (J-A) =

400 500˚C/W

NE02107

200

50 100 150

Ambient Temperature, TA (°C)

200

NE02135

DC POWER DERATING CURVES

800

WITH INFINITE

600 HEAT SINK

RTH(J-C) = 120˚ C/W

MOUNTED ON AI2O3

400 SUBSTRATE

(20X50X0.6") RTH(J-A) =

190˚C/W

200

FREE AIR

RTH(J-A) = 600˚C/W

0 50 100 150

Ambient Temperature, TA (°C)

200

DEVICE CAPACITANCE

f =1 MHz

IE = 0

CEB

0.7

CCB

0.5

0.3

0.5 1 2 3 5 7 10

20 30

Collector to Base Voltage, VCB (V)

Emitter to Base Voltage, VEB (V)

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