IRF7665S2TRPBF PDF даташит

Спецификация IRF7665S2TRPBF изготовлена «International Rectifier» и имеет функцию, называемую «Digital Audio MOSFET».

Детали детали

Номер произв	IRF7665S2TRPBF
Описание	Digital Audio MOSFET
Производители	International Rectifier
логотип

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IRF7665S2TRPBF Даташит, Описание, Даташиты

DIGITAL AUDIO MOSFET

PD - 96239

IRF7665S2TRPbF

IRF7665S2TR1PbF

Features

• Key parameters optimized for Class-D audio amplifier

applications

• Low RDS(on) for improved efficiency

• Low Qg for better THD and improved efficiency

• Low Qrr for better THD and lower EMI

• Low package stray inductance for reduced ringing and lower

EMI

• Can deliver up to 100W per channel into 8Ω with no heatsink

• Dual sided cooling compatible

· Compatible with existing surface mount technologies

· RoHS compliant containing no lead or bromide

· Lead-Free (Qualified up to 260°C Reflow)

· Industrial Qualified

Key Parameters

VDS 100

RDS(on) typ. @ VGS = 10V

Qg typ.

RG(int) typ.

8.3

3.5

SB DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)

SB SC

M2 M4

L4 L6 L8

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the

latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse

recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as

efficiency, THD, and EMI.

The IRF7665S2TR/TR1PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower

parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im-

proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red

or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and

processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving

thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable

device for Class-D audio amplifier applications.

Absolute Maximum Ratings

Parameter

VDS Drain-to-Source Voltage

VGS Gate-to-Source Voltage

ID @ TC = 25°C

ID @ TC = 100°C

ID @ TA = 25°C

IDM

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

PD @TC = 25°C

PD @TC = 100°C

PD @TA = 25°C

TSTG

Maximum Power Dissipation

jPower Dissipation

jÃLinear Derating Factor

Operating Junction and

Storage Temperature Range

Thermal Resistance

RθJA

RθJ-Can

RθJ-PCB

Parameter

eJunction-to-Ambient

hJunction-to-Ambient

iJunction-to-Ambient

jkJunction-to-Can

Junction-to-PCB Mounted

Notes through are on page 2

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Max.

100

± 20

14.4

10.2

4.1

2.4

0.2

-55 to + 175

Typ.

–––

12.5

–––

1.4

Max.

–––

5.0

–––

Units

W/°C

°C

Units

°C/W

07/02/09

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IRF7665S2TR/TR1PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

∆V(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

RDS(on)

Static Drain-to-Source On-Resistance

–––

VGS(th)

Gate Threshold Voltage

3.0

IDSS

Drain-to-Source Leakage Current

–––

IGSS

Gate-to-Source Forward Leakage

–––

Gate-to-Source Reverse Leakage

–––

RG(int)

Internal Gate Resistance

–––

Typ.

–––

0.10

4.0

–––

3.5

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ.

gfs Forward Transconductance

8.8 –––

Qgs1

Qgs2

Qgd

Qgodr

Qsw

td(on)

td(off)

Ciss

Coss

Crss

Coss

Coss eff.

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

––– 8.3

––– 1.9

––– 0.77

––– 3.2

––– 2.4

––– 4.0

––– 3.8

––– 6.4

––– 7.1

––– 3.6

––– 515

––– 112

––– 30

––– 533

––– 67

––– 115

Avalanche Characteristics

Parameter

dEAS Single Pulse Avalanche Energy

ÃIAR Avalanche Current

Diode Characteristics

Parameter

IS Continuous Source Current

(Body Diode)

ISM Pulsed Source Current

Ã(Body Diode)

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

Min.

–––

Typ.

–––

––– –––

––– 33

––– 38

Max.

–––

5.0

250

100

-100

5.0

Units

V/°C

mΩ

µA

Ω

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

fVGS = 10V, ID = 8.9A

VDS = VGS, ID = 25µA

VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

Max.

–––

Units

Conditions

VDS = 25V, ID = 8.9A

VDS = 50V

VGS = 10V

ID = 8.9A

See Fig. 6 and 17

VDD = 50V

ID = 8.9A

fns RG = 6.8Ω

VGS = 10V

VGS = 0V

VDS = 25V

pF ƒ = 1.0MHz

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 80V, ƒ = 1.0MHz

gVGS = 0V, VDS = 0V to 80V

Typ.

–––

Max.

8.9

Units

Max.

14.4

1.3

–––

Units

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

fTJ = 25°C, IS = 8.9A, VGS = 0V

TJ = 25°C, IF = 8.9A, VDD = 25V

fdi/dt = 100A/µs

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Starting TJ = 25°C, L = 0.944mH, RG = 25Ω, IAS = 8.9A.

Surface mounted on 1 in. square Cu board.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. is a fixed capacitance that gives the same

charging time as Coss while VDS is rising from 0 to 80% VDSS.

Used double sided cooling , mounting pad.

Mounted on minimum footprint full size board with

metalized back and with small clip heatsink.

TC measured with thermal couple mounted to top

(Drain) of part.

Rθ is measured at TJ of approximately 90°C.

Based on testing done using a typical device & evaluation board

at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case

temperature ∆TC is 55°C.

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100

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

0.1

0.01

5.0V

0.001

0.1

≤60µs PULSE WIDTH

Tj = 25°C

1 10

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

IRF7665S2TR/TR1PbF

100

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

0.1

5.0V

≤60µs PULSE WIDTH

Tj = 175°C

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.5

ID = 8.9A

VGS = 10V

2.0

1 TJ = -40°C

TJ = 25°C

TJ = 175°C

0.1

VDS = 25V

≤60µs PULSE WIDTH

0.01

2 4 6 8 10 12 14 16

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

10000

1000

100

VGS = 0V, f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

Crss

14.0

ID= 8.9A

12.0

VDS= 80V

10.0 VDS= 50V

VDS= 20V

8.0

6.0

4.0

2.0

10 100

Fig 5. TypicalVCDSa,pDarcaiitna-tnoc-Seouvrsc.eDVroalitnag-teo(-VS)ource Voltage

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0.0

0 2 4 6 8 10 12

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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Номер в каталоге	Описание	Производители
IRF7665S2TRPbF	DIGITAL AUDIO MOSFET	IRF
IRF7665S2TRPBF	Digital Audio MOSFET	International Rectifier

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