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FTP11N08 PDF даташит
| Спецификация FTP11N08 изготовлена «IPS» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
| Номер произв | FTP11N08 |
| Описание | N-Channel MOSFET |
| Производители | IPS |
| логотип |  |
11 Pages
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FTP11N08
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP11N08
PACKAGE
TO-220
BRAND
FTP11N08
Pb Lead Free Package and Finish
VDSS
75V
RDS(ON) (Max.)
11 mΩ
ID
100A
D
G
DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=11 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTP06N65
75
100*
Figure 3
Figure 6
230
1.54
± 20
600
Figure 8
3.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating, 75 Amps
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
©2007 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 0.65
-- -- 62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175 oC.
1 cubic foot chamber, free air.
FTP11N08 REV. B June 2007
Free Datasheet http://www.Datasheet4U.com
No Preview Available ! |
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
∆BVDSS/∆ TJ
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
Coefficient, Figure 11.
75 --
-- 0.08
-- --
IDSS Drain-to-Source Leakage Current
-- --
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- --
-- --
Max.
--
--
25
250
100
-100
Units
V
V/ oC
µA
nA
Test Conditions
VGS=0V, ID=250µA
Reference to 25 oC,
ID=250 µA
VDS=75V, VGS=0V
VDS=60V, VGS=0V
TJ=150 oC
VGS=+20 V
VGS= -20V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
Gate Threshold Voltage, Figure 12.
--
2.0
9.5
--
gfs Forward Transconductance
-- 83
Max.
11.0
4.0
--
Units
mΩ
V
S
Test Conditions
VGS=10V, ID=45A
(NOTE *4)
VDS=VGS, ID=250µA
VDS=15V, ID=75A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 4000 --
-- 1050 --
-- 136 --
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
-- 87 --
-- 32 --
nC
Qgd Gate-to-Drain (“Miller”) Charge
-- 21 --
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=30V
ID=75A
VGS=10 V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 17 --
-- 110 --
-- 75 --
-- 67 --
ns
VDD=30 V
ID=75A
VGS=10 V
RG=4.7 Ω
©2007 InPower Semiconductor Co., Ltd.
FTP11N08 REV. B June 2007
Page 2 of 11
Free Datasheet http://www.Datasheet4U.com
No Preview Available ! |
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
--
-- 120
A
ISM
Maximum Pulsed Current (Body Diode)
-- -- 480
A
VSD Diode Forward Voltage
-- -- 1.5
V
trr Reverse Recovery Time
-- 130 195
ns
Qrr Reverse Recovery Charge
-- 340 510
nC
Test Conditions
Integral pn-diode
in MOSFET
IS=75A, VGS=0V
VGS=0 V
IF=75A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +175oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 75A di/dt < 100 A/µs, VDD < BVDSS, TJ=+175oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2007 InPower Semiconductor Co., Ltd.
FTP11N08 REV. B June 2007
Page 3 of 11
Free Datasheet http://www.Datasheet4U.com
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