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D2250 PDF даташит
| Спецификация D2250 изготовлена «Panasonic Semiconductor» и имеет функцию, называемую «NPN Transistor - 2SD2250». |
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Детали детали
| Номер произв | D2250 |
| Описание | NPN Transistor - 2SD2250 |
| Производители | Panasonic Semiconductor |
| логотип |  |
3 Pages
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Power Transistors
2SD2250
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1490
s Features
q Optimum for 80W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): <2.5V
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
160
140
5
12
7
90
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2.0±0.3
3.0±0.3
1.0±0.2
1.5
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 160V, IE = 0
VCE = 140V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 6A
IC = 6A, IB = 6mA
IC = 6A, IB = 6mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 6A, IB1 = 6mA, IB2 = –6mA,
VCC = 50V
min
140
2000
5000
typ max Unit
100 µA
100 µA
100 µA
V
30000
2.5 V
3.0 V
20 MHz
2.5 µs
5.0 µs
2.5 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
1
Free Datasheet http://www.Datasheet4U.com
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Power Transistors
PC — Ta
200
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
150 (3) Without heat sink
(PC=3.5W)
100 (1)
50
(2) (3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=1000
30
10
TC=100˚C
3
25˚C
–25˚C
1
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
100
30
tstg
10
ton
3
tf
1
ton, tstg, tf — IC
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000 (IB1=–IB2)
VCC=50V
TC=25˚C
0.3
0.1
0.03
0.01
0
4 8 12 16
Collector current IC (A)
IC — VCE
12
TC=25˚C
10 IB=5mA
8 1mA
0.9mA
0.8mA
0.7mA
6 0.6mA
0.5mA
0.4mA
4 0.3mA
0.2mA
2
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2250
VBE(sat) — IC
100
IC/IB=1000
30
10
3
TC=–25˚C
1 100˚C
25˚C
0.3
0.1
0.1
0.3 1 3 10 30
Collector current IC (A)
100
100000
30000
10000
hFE — IC
VCE=5V
3000 TC=100˚C
1000
25˚C
300
100 –25˚C
30
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
1
3
10 30
100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
30
ICP
10
IC
3
Non repetitive pulse
TC=25˚C
10ms
DC
t=1ms
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
Free Datasheet http://www.Datasheet4U.com
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Power Transistors
1000
100
10
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
0.1
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2SD2250
3
Free Datasheet http://www.Datasheet4U.com
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DataSheet26.com | 2020 | Контакты | Поиск |