29LV512 PDF даташит

Спецификация 29LV512 изготовлена «ATMEL Corporation» и имеет функцию, называемую «AT29LV512».

Детали детали

Номер произв	29LV512
Описание	AT29LV512
Производители	ATMEL Corporation
логотип

15 Pages

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Features

• Single Supply Voltage, Range 3V to 3.6V

• 3-volt Only Read and Write Operation

• Software Protected Programming

• Low-power Dissipation

– 15 mA Active Current

– 50 µA CMOS Standby Current

• Fast Read Access Time – 120 ns

• Sector Program Operation

– Single-cycle Reprogram (Erase and Program)

– 512 Sectors (128 Bytes/Sector)

– Internal Address and Data Latches for 128 Bytes

• Fast Sector Program Cycle Time – 20 ms Max

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Typical Endurance > 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Green (Pb/Halide-free) Packaging Option

512K (64K x 8)

3-volt Only

Flash Memory

AT29LV512

1. Description

The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only

memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-

ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 120 ns with power dissipation of just 54 mW over the industrial tem-

perature range. When the device is deselected, the CMOS standby current is less

than 50 µA. The device endurance is such that any sector can typically be written to in

excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29LV512 does not require

high input voltages for programming. Three-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

EPROM. Reprogramming the AT29LV512 is performed on a sector basis; 128 bytes

of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

0177O–FLASH–9/08

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2. Pin Configurations

Pin Name

A0 - A15

I/O0 - I/O7

2.1 32-lead PLCC Top View

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

A7 5

A6 6

A5 7

A4 8

A3 9

A2 10

A1 11

A0 12

I/O0 13

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

2.2 32-lead TSOP (Type 1) Top View

A11

A13

A14

VCC

A15

A12

32 OE

31 A10

30 CE

29 I/O7

28 I/O6

27 I/O5

26 I/O4

25 I/O3

24 GND

23 I/O2

22 I/O1

21 I/O0

20 A0

19 A1

18 A2

17 A3

2 AT29LV512

0177O–FLASH–9/08

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3. Block Diagram

AT29LV512

4. Device Operation

4.1 Read

The AT29LV512 is accessed like an EPROM. When CE and OE are low and WE is high, the

data stored at the memory location determined by the address pins is asserted on the outputs.

The outputs are put in the high impedance state whenever CE or OE is high. This dual-

line control gives designers flexibility in preventing bus contention.

4.2 Software Data Protection Programming

The AT29LV512 has 512 individual sectors, each 128 bytes. Using the software data protection

feature, byte loads are used to enter the 128 bytes of a sector to be programmed. The

AT29LV512 can only be programmed or reprogrammed using the software data protection fea-

ture. The device is programmed on a sector basis. If a byte of data within the sector is to be

changed, data for the entire 128-byte sector must be loaded into the device. The AT29LV512

automatically does a sector erase prior to loading the data into the sector. An erase command is

not required.

Software data protection protects the device from inadvertent programming. A series of three

program commands to specific addresses with specific data must be presented to the device

before programming may occur. After writing the three-byte command sequence (and after tWC),

the entire device is protected. The same three program commands must begin each program

operation. All software program commands must obey the sector program timing specifications.

Power transitions will not reset the software data protection feature; however, the software fea-

ture will guard against inadvertent program cycles during power transitions.

Any attempt to write to the device without the 3-byte command sequence will start the internal

write timers. No data will be written to the device; however, for the duration of tWC, a read opera-

tion will effectively be a polling operation.

After the software data protection’s 3-byte command code is given, a byte load is performed by

applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high. The

address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by

the first rising edge of CE or WE.

0177O–FLASH–9/08

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Номер в каталоге	Описание	Производители
29LV512	AT29LV512	ATMEL Corporation

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