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2SK3450-01 PDF даташит

Спецификация 2SK3450-01 изготовлена ​​​​«Fuji» и имеет функцию, называемую «n-Channel Silicon Power MOSFET».

Детали детали

Номер произв 2SK3450-01
Описание n-Channel Silicon Power MOSFET
Производители Fuji
логотип Fuji логотип 

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2SK3450-01 Даташит, Описание, Даташиты
2SK3450-01
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
FUJI POWER MOSFET 200303
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage
VDS
600
Continuous drain current
ID
±13
Pulsed drain current
ID(puls]
±52
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR *2
13
Maximum Avalanche Energy
EAS *1
216.7
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD Ta=25°C
2.02
Tc=25°C
225
Operating and storage
Tch
+150
temperature range
Tstg -55 to +150
*1 L=2.36mH, Vcc=60V See to Avalanche Energy Graph *2 Tch=<150°C
*3 IF=<-ID, -di/dt=50A/µs, Vcc<=BVDSS, Tch<=150°C
Unit
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=6A VGS=10V
ID=6A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=6A
VGS=10V
RGS=10
VCC=300V
ID=12A
VGS=10V
L=2.36mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
600 V
3.0 5.0 V
25 µA
250
10 100
nA
0.50
5.5 11
0.65
S
1600 2400
pF
160 240
7 10.5
18 27 ns
16 24
35 50
8 15
34
12.5
51
19
nC
11.5 17.5
13 A
1.0 1.50 V
0.75 µs
6.5 µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
0.556 °C/W
62.0 °C/W
1
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2SK3450-01 Даташит, Описание, Даташиты
2SK3450-01
Characteristics
Allowable Power Dissipation
PD=f(Tc)
250
200
150
100
50
0
0 25 50 75 100 125 150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
30
28
26 20V
10V
24 8V
22 7.5V
20
18
16
14 7.0V
12
10
8
6 VGS=6.5V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
ID [A]
10
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=60V
AS
500
I =6A
AS
400
300 I =8A
AS
200
I =13A
AS
100
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
1.4
VGS=6.5V
1.3
7.0V
1.2
1.1
1.0
7.5V
0.9 8V
0.8 10V
0.7 20V
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
ID [A]
2
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2SK3450-01 Даташит, Описание, Даташиты
2SK3450-01
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8 max.
0.6 typ.
0.4
0.2
0.0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
7.0
6.5
6.0
5.5
max.
5.0
4.5
4.0
3.5
3.0 min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125
Tch [°C]
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=12A, Tch=25°C
24
22
20 Vcc= 120V
18
300V
16 480V
14
12
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10n
Ciss
1n
100p
Coss
10p
1p
10-1
Crss
100 101 102
VDS [V]
103
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10
102
tr
10 td(off)
td(on)
101
tf
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
100
100
ID [A]
101
3
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Номер в каталогеОписаниеПроизводители
2SK3450-01n-Channel Silicon Power MOSFETFuji
Fuji

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