DataSheet26.com

2SC4430 PDF даташит

Спецификация 2SC4430 изготовлена ​​​​«Inchange Semiconductor» и имеет функцию, называемую «Silicon NPN Power Transistors».

Детали детали

Номер произв 2SC4430
Описание Silicon NPN Power Transistors
Производители Inchange Semiconductor
логотип Inchange Semiconductor логотип 

4 Pages
scroll

No Preview Available !

2SC4430 Даташит, Описание, Даташиты
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4430
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·Switching regulator applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Tc=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1100
800
7
12
30
6
65
3
150
-55~150
UNIT
V
V
V
A
A
A
W
Free Datasheet http://www.Datasheet4U.com









No Preview Available !

2SC4430 Даташит, Описание, Даташиты
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4430
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat
VBEsat
ICBO
Collector-emitter saturation voltage IC=6A;IB=1.2A
Base-emitter saturation voltage
IC=6A;IB=1.2A
Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT Transition frequency
COB Output capacitance
Switching times
IC=0.8A ; VCE=10V
VCB=10V;f=1MHz
ton Turn-on time
tstg Storage time
tf Fall time
IC=8A;RL=50Ω
IB1=1.6A;- IB2=3.2A
VCC=400V
‹ hFE-1 classifications
K LM
10-20 15-30 20-40
MIN TYP. MAX UNIT
1100
V
800 V
7V
2.0 V
1.5 V
10 μA
10 μA
10 40
8
15 MHz
215 pF
0.5 μs
3.0 μs
0.3 μs
2
Free Datasheet http://www.Datasheet4U.com









No Preview Available !

2SC4430 Даташит, Описание, Даташиты
Inchange Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4430
Fig.2 Outline dimensions
3
Free Datasheet http://www.Datasheet4U.com










Скачать PDF:

[ 2SC4430.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
2SC4430Switching Regulator ApplicationsSanyo Semicon Device
Sanyo Semicon Device
2SC4430Silicon NPN Power TransistorsInchange Semiconductor
Inchange Semiconductor
2SC4432NPN Epitaxial Planar Silicon TransistorSanyo Semicon Device
Sanyo Semicon Device
2SC4432NPN TransistorsKexin
Kexin

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск