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K3599-01MR PDF даташит
| Спецификация K3599-01MR изготовлена «Fuji» и имеет функцию, называемую «N-CHANNEL SILICON POWER MOSFET». |
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Детали детали
| Номер произв | K3599-01MR |
| Описание | N-CHANNEL SILICON POWER MOSFET |
| Производители | Fuji |
| логотип |  |
4 Pages
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2SK3599-01MR
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100 V
VDSX *5
70 V
Continuous drain current
Pulsed drain current
ID
ID(puls]
±29 A
±116 A Equivalent circuit schematic
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
Maximum Avalanche Energy
EAS *1
29
155.8
A
mJ
Drain(D)
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.16
37
W
Gate(G)
Operating and storage
Tch
+150
°C
Source(S)
temperature range
Tstg
-55 to +150
°C
Isolation voltage
VISO *6
2 kVrms
*1 L=222µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 100V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=10A VGS=10V
ID=10A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=10A
VGS=10V
RGS=10 Ω
VCC=50V
ID=20A
VGS=10V
L=222µH Tch=25°C
IF=20A VGS=0V Tch=25°C
IF=20A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
100
3.0
6
29
Typ. Max. Units
V
5.0 V
25 µA
250
10 100
nA
47 62 mΩ
12 S
730 1095
pF
190 285
12 18
12 18 ns
3.8 6
23 35
8.5 13
22 33 nC
9 13.5
69
1.10
65
0.17
A
1.65 V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
3.378 °C/W
58.0 °C/W
1
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2SK3599-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
50
45
40
35
30
25
20
15
10
5
0
0 25 50 75 100 125
Tc [°C]
150
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
80
20V
10V
60
8V
40
7.5V
7.0V
20 6.5V
6.0V
VGS=5.5V
0
0 2 4 6 8 10 12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1 10
ID [A]
100
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
400
I =12A
350 AS
300
I =17A
AS
250
200
I =29A
AS
150
100
50
0
0 25 50 75 100 125 150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.18
VGS=
5.5V 6.0V 6.5V
0.15
7.0V
7.5V
8V
0.12
0.09
10V
0.06
20V
0.03
0.00
0
10 20 30 40 50 60
ID [A]
2
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2SK3599-01MR
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=10A,VGS=10V
150
125
100
max.
75
50
typ.
25
0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0 max.
4.5
4.0
3.5
3.0 min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=20A, Tch=25°C
14
12
10
8
Vcc= 50V
6
4
2
0
0 10 20 30 40
Qg [nC]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
101
100
10-1
10-2
10-1
Ciss
Coss
100 101
VDS [V]
Crss
102
Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID
IF=f(VSD):80µs Pulse test,Tch=25°C
100
t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
103
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
tf
102
td(on)
101
tr
td(off)
100
10-1
100 101
ID [A]
102
3
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| Номер в каталоге | Описание | Производители |
| K3599-01MR | N-CHANNEL SILICON POWER MOSFET | Fuji |
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