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IRF7737L2TR1PBF PDF даташит

Спецификация IRF7737L2TR1PBF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRF7737L2TR1PBF
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

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IRF7737L2TR1PBF Даташит, Описание, Даташиты
Advanced Process Technology
Optimized for Industrial Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
PD - 96414
IRF7737L2TRPbF
IRF7737L2TR1PbF
DirectFET® Power MOSFET ‚
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
1.5mΩ
1.9mΩ
156A
89nC
SSS
D G SSS D
Applicable DirectFET® Outline and Substrate Outline 
SB SC
M2
M4
L6 DirectFET® ISOMETRIC
L4 L6 L8
Description
The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to
achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package
allows dual sided cooling to maximize thermal transfer.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the IRF7737L2PbF to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
40
± 20
156
110
31
315
624
83
3.3
104
386
See Fig.18a, 18b, 16, 17
V
A
W
mJ
A
mJ
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
270
-55 to + 175
°C
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
fLinear Derating Factor
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.8
0.5
0.56
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
10/27/11
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IRF7737L2TR1PBF Даташит, Описание, Даташиты
IRF7737L2TR/TR1PbF
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
40 ––– –––
V VGS = 0V, ID = 250μA
i––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
––– 1.5 1.9 mΩ VGS = 10V, ID = 94A
2.0
–––
3.0
-10
4.0
–––
V
mV/°C
VDS = VGS, ID = 150μA
100 ––– –––
S VDS = 10V, ID = 94A
RG Gate Resistance
––– 0.6 –––
Ω
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
5
250
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
100
-100
nA
VGS = 20V
VGS = -20V
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs1
Qgs2
Qgd
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 89 134
VDS = 20V, VGS = 10V
––– 18 –––
ID = 94A
––– 8 ––– nC See Fig.11
––– 34 –––
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 29 –––
––– 42 –––
––– 39 –––
––– 12 –––
––– 19 –––
––– 22 –––
––– 14 –––
––– 5469 –––
––– 1193 –––
––– 534 –––
––– 4296 –––
––– 1066 –––
––– 1615 –––
ÃinC VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10V
ns
ID = 94A
RG = 1.8Ω
VGS = 0V
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
VGS = 0V, VDS = 0V to 32V
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
––– ––– 156
MOSFET symbol
A showing the
D
ISM Pulsed Source Current
Ãg(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
i––– ––– 624
––– ––– 1.3
integral reverse
p-n junction diode.
V IS = 94A, VGS = 0V
G
S
i––– 35 53 ns IF = 94A, VDD = 20V
––– 32 48 nC di/dt = 100A/μs
ƒ Surface mounted on 1 in. square Cu
(still air).
Notes  through Š are on page 10
2
‰ Mounted to a PCB with small
clip heatsink (still air)
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
www.irf.com
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IRF7737L2TR1PBF Даташит, Описание, Даташиты
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1 4.5V
0.1
0.1
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
6
ID = 94A
5
4
3
TJ = 125°C
2
1
TJ = 25°C
0
4 6 8 10 12 14 16 18 20
Fig 3. TypicalVOGnS-,RGeasteis-ttoan-Scoeurvcse.VGolatatgeeV(Vo)ltage
1000
VDS = 25V
60μs PULSE WIDTH
100
TJ = -40°C
TJ = 25°C
10 TJ = 175°C
1
34567
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
www.irf.com
8
IRF7737L2TR/TR1PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
1
0.1
2.8
60μs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5 TJ = 125°C
2.2
1.9
1.6
1.3 TJ = 25°C
Vgs = 10V
1.0
5 30 55 80 105 130 155 180 205
ID, Drain Current (A)
Fig 4. Typical On-Resistance vs. Drain Current
2.0
ID = 94A
1.8 VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
3
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Номер в каталогеОписаниеПроизводители
IRF7737L2TR1PBFPower MOSFET ( Transistor )International Rectifier
International Rectifier

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