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IRF6810STR1PBF PDF даташит

Спецификация IRF6810STR1PBF изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRF6810STR1PBF
Описание Power MOSFET ( Transistor )
Производители International Rectifier
логотип International Rectifier логотип 

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IRF6810STR1PBF Даташит, Описание, Даташиты
PD -96393
IRF6810STRPbF
IRF6810STR1PbF
l RoHS Compliant and Halogen Free 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
l Footprint compatible to DirectFET
DirectFET®plus Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 4.0mΩ @ 10V 5.6mΩ @ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.6V
DGS
D
Applicable DirectFET Outline and Substrate Outline 
S1 DirectFET®plus ISOMETRIC
S1 S2 SB
M2 M4
L4 L6 L8
Description
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
15
ID = 16A
10
TJ = 125°C
5
TJ = 25°C
0
0 2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
25
±16
16
13
50
130
51
13
Units
V
A
mJ
A
14.0
12.0 ID= 13A
10.0
8.0
VDS= 20V
VDS= 13V
VDS= 5V
6.0
4.0
2.0
0.0
0
5 10 15 20
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.601mH, RG = 50Ω, IAS = 13A.
1
08/08/11
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IRF6810STR1PBF Даташит, Описание, Даташиты
IRF6810STRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.1
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
182
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS
Continuous Source Current
(Body Diode)
–––
ÃgISM Pulsed Source Current
(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
22
4.0
5.6
1.6
-5.9
–––
–––
–––
–––
–––
7.4
1.6
0.98
2.7
2.1
3.68
8.9
0.4
8.2
22
11
4.8
1038
325
74
Typ.
–––
–––
–––
12
8.4
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
––– mV/°C Reference to 25°C, ID = 1mA
i5.2
i7.3
mΩ
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 13A
2.1
–––
V
mV/°C
VDS
=
VGS,
ID
=
25μA
1.0
150
100
-100
μA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 16V
VGS = -16V
––– S VDS = 13V, ID =13A
11
––– VDS = 13V
–––
–––
nC
VGS = 4.5V
ID = 13A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
ÃiΩ
––– VDD = 13V, VGS = 4.5V
–––
–––
ns
ID = 13A
RG= 1.8Ω
–––
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
16
MOSFET symbol
A showing the
D
130
integral reverse
p-n junction diode.
G
S
i1.0 V TJ = 25°C, IS = 13A, VGS = 0V
i18 ns TJ = 25°C, IF =13A
13 nC di/dt = 280A/μs
Notes:
‡ Pulse width 400μs; duty cycle 2%.
2
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IRF6810STR1PBF Даташит, Описание, Даташиты
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
IRF6810STRPbF
Max.
2.1
1.3
20
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
60
–––
–––
6.3
–––
Units
W
°C
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1
0.1
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
R 1R 1
R2R2
R 3R 3
R 4R 4
Ri (°C/W) τi (sec)
τJ τJ
τ1 τ1
τ2 τ2
τ3 τ3
τ4 τ4
τAτA
20.0398
11.5686
25.1338
3.8916
0.0561
0.6065
Ci= τi/Ri
Ci= τi/Ri
3.20948 0.0013
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006 1E-005 0.0001
0.001
0.01
0.1
1
10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
Notes:
ˆ Used double sided cooling , mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
Š Rθ is measured at TJ of approximately 90°C.
back and with small clip heatsink.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
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Номер в каталогеОписаниеПроизводители
IRF6810STR1PBFPower MOSFET ( Transistor )International Rectifier
International Rectifier

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