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PDF IRF6728MPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6728MPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97568
IRF6728MPbF
IRF6728MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
l RoHS Compliant Containing No Lead and Halogen Free
l Integrated Monolithic Schottky Diode
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
l Dual Sided Cooling Compatible
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
28nC 8.7nC 3.1nC 29nC 22nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
S
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DG
D
S
l 100% Rg tested
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6728MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6728MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
23
18 A
140
180
230 mJ
18 A
10
ID = 23A
8
6
4 TJ = 125°C
2 TJ = 25°C
0
2468
10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0 ID= 18A
10.0
8.0
VDS= 24V
VDS= 15V
VDS= 6V
6.0
4.0
2.0
0.0
0
20 40 60 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
1
9/24/10
Free Datasheet http://www.Datasheet4U.com
1 page  
1000
100
10
TJ = 150°C
1 TJ = 25°C
TJ = -40°C
VGS = 0V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6728MTRPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
1msec
1
DC
0.1 TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.0 0.1
10msec
1.0
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
140 2.5
120
100 2.0 ID = 10mA
80
60
1.5
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
900
800
700
600
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.1A
1.8A
BOTTOM 18A
500
400
300
200
100
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
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| PDF Descargar | [ Datasheet IRF6728MPBF.PDF ] | |
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