2SC2383 PDF даташит
Спецификация 2SC2383 изготовлена «Unisonic Technologies» и имеет функцию, называемую «NPN TRANSISTOR ( 1A, 160V )». |
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Детали детали
Номер произв | 2SC2383 |
Описание | NPN TRANSISTOR ( 1A, 160V ) |
Производители | Unisonic Technologies |
логотип |
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UNISONIC TECHNOLOGIES CO., LTD
2SC2383
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
COLOR TV AUDIO OUTPUT &
COLOR TV VERTICAL OUTPUT
DESCRIPTION
The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses
UTC’s advanced technology to provide customers high DC current
gain and high breakdown voltage.
The UTC 2SC2383 is usually used in Color TV Vertical Deflection
Output and Audio Output.
FEATURES
* High breakdown Voltage
* High DC Current Gain
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SC2383L-T92-B
2SC2383G-T92-B
Package
TO-92
Pin Assignment
123
ECB
Packing
Tape Box
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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2SC2383
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC 1 A
Base Current
IB 0.5 A
Collector Power Dissipation
Pc
900 mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
hFE CLASSIFICATION
SYMBOL
ICBO
IEBO
BVCEO
hFE
VCE(sat)
VBE(on)
fT
Cob
TEST CONDITIONS
VCE=150V, IE=0
VEB=6V, IC=0
IC=10mA, IB=0
VCE=5V, IC=200mA
IC=500mA, IB=50mA
VCE=5V, IC=5mA
VCE=5V, IC=200mA
VCB=10V, IE =0, f=1MHz
MIN TYP MAX UNIT
1 µA
1 µA
160 V
60 320
1.5 V
0.45 0.75 V
20 100
MHz
20 pF
CIASSIFICATION
hFE
R
60~120
O
100-200
Y
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SC2383
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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