|
|
Datasheet 2PG002 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2PG002 | N-Channel Enhancement Mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG002
N-channel enhancement mode IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 190 nsec(typ.)
|  Panasonic | igbt |
2PG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2PG001 | N-channel enhancement mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG001
N-channel enhancement mode IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High speed hall time: tf = 250 nsec(typ.)
Panasonic igbt | | |
| 2 | 2PG002 | N-Channel Enhancement Mode IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG002
N-channel enhancement mode IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 190 nsec(typ.)
Panasonic igbt | | |
| 3 | 2PG006 | Silicon N-channel enhancement IGBT IGBT
This product complies with the RoHS Directive (EU 2002/95/EC).
PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnua Panasonic igbt | | |
| 4 | 2PG009 | Silicon N-Channel Enhancement IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG009
Silicon N-channel enhancement IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
� Panasonic igbt | | |
| 5 | 2PG011 | Silicon N-Channel Enhancement IGBT This product complies with the RoHS Directive (EU 2002/95/EC).
IGBT
2PG011
Silicon N-channel enhancement IGBT
For plasma display panel drive For high speed switching circuits Features
Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
� Panasonic igbt | | |
| 6 | 2PG401 | Insulated Gate Bipolar Transistor IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2±0.3 0.8±0.2
unit: mm
7.0±0.3 3.0±0.2
3.5±0.2
s Applications
q For flash-light for  Panasonic Semiconductor transistor | | |
| 7 | 2PG402 | Insulated Gate Bipolar Transistor IGBTs
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package
unit: mm
6.5± 0.1 5.3± 0.1 4.35± 0.1 3.0± 0.1
q For flash-light for use in a camera
2.3± 0.1
0.2max. Panasonic Semiconductor transistor | |
| Esta página es del resultado de búsqueda del 2PG002. Si pulsa el resultado de búsqueda de 2PG002 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |