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A1037 PDF даташит

Спецификация A1037 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SA1037».

Детали детали

Номер произв A1037
Описание PNP Transistor - 2SA1037
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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A1037 Даташит, Описание, Даташиты
Transistors
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
General Purpose Transistor
(50V, 0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /
2SA933AS
!Features
1) Excellent hFE linearity.
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S.
!Structure
Epitaxial planar type.
PNP silicon transistor
!External dimensions (Units : mm)
2SA1037AK
2SA1576A
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : F
2SA1774
(1)
(3) (2)
0.8
1.6
0.1Min.
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
(3) Collecto
Abbreviated symbol : F
1.25
2.1
0.1to0.4
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : F
2SA2029
1.2
0.2 0.8 0.2
(2)
(3)
(1)
0.15Max.
ROHM : VMT3
EIAJ :
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F
2SA933AS
4
2
Denotes hFE
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
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A1037 Даташит, Описание, Даташиты
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SA1037AK, 2SA1576A
2SA2029, 2SA1774
2SA933AS
Junction temperature
Storage temperature
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
6
0.15
0.2
0.15
0.3
150
55~+150
Unit
V
V
V
A (DC)
W
˚C
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min.
60
50
6
120
Typ.
140
4.0
Max.
0.1
0.1
0.5
560
5.0
Unit
V
V
V
µA
µA
V
MHz
pF
Conditions
IC=−50µA
IC=−1µA
IE=−50µA
VCB=−60V
VEB=−6V
IC/IB=−50mA/5mA
VCE=−6V, IC=−1mA
VCE=−12V, IE=2mA, f=30MHz
VCB=−12V, IE=0A, f=1MHz
!Packaging specifications and hFE
Package
Code
Type
Basic ordering
hFE unit (pieces)
2SA2029 QRS
2SA1037AK QRS
2SA1576A QRS
2SA1774 QRS
2SA933AS QRS
T146
3000
T106
3000
hFE values are classified as follows:
Item
hFE
Q
120~270
R
180~390
S
270~560
Taping
TL
T2L
3000
8000
−−
−−
−−
TP
5000
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A1037 Даташит, Описание, Даташиты
Transistors
!Electrical characteristic curves
50
Ta=100˚C
20 25˚C
40˚C
10
VCE=6V
5
2
1
0.5
0.2
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
10
Ta=25˚C
35.0
31.5
8 28.0
24.5
6 21.0
17.5
4 14.0
10.5
2 7.0
3.5µA
IB=0
0 0.4 0.8 1.2 1.6 2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
100
Ta=25˚C
500
80 450
400
350
300
60
40
20
250
200
150
100
50µA
IB=0
0 1 2 3 4 5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
500
Ta=25˚C
200
VCE=5V
3V
1V
100
50
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (I)
500
Ta=100˚C
25˚C
200 40˚C
100
50
0.2 0.5 1 2
VCE=6V
5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
1
0.5
Ta=25˚C
0.2
0.1
0.05
IC/IB=50
20
10
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
1
0.5
lC/lB=10
1000
500
Ta=25˚C
VCE=12V
0.2
0.1
0.05
Ta=100˚C
25˚C
40˚C
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
200
100
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
20
Cib
10
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cob
5
2
0.5 1 2
5 10 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
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