A1037 PDF даташит
Спецификация A1037 изготовлена «ROHM Semiconductor» и имеет функцию, называемую «PNP Transistor - 2SA1037». |
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Детали детали
Номер произв | A1037 |
Описание | PNP Transistor - 2SA1037 |
Производители | ROHM Semiconductor |
логотип |
3 Pages
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Transistors
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
General Purpose Transistor
(−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /
2SA933AS
!Features
1) Excellent hFE linearity.
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S.
!Structure
Epitaxial planar type.
PNP silicon transistor
!External dimensions (Units : mm)
2SA1037AK
2SA1576A
1.6
2.8
0.3to0.6
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : F ∗
2SA1774
(1)
(3) (2)
0.8
1.6
0.1Min.
ROHM : EMT3
EIAJ : SC-75A
(1) Emitter
(2) Base
(3) Collecto
Abbreviated symbol : F ∗
1.25
2.1
0.1to0.4
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : F ∗
2SA2029
1.2
0.2 0.8 0.2
(2)
(3)
(1)
0.15Max.
ROHM : VMT3
EIAJ :
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F ∗
2SA933AS
4
2
∗ Denotes hFE
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
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Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
2SA1037AK, 2SA1576A
2SA2029, 2SA1774
2SA933AS
Junction temperature
Storage temperature
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−60
−50
−6
−0.15
0.2
0.15
0.3
150
−55~+150
Unit
V
V
V
A (DC)
W
˚C
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min.
−60
−50
−6
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
−0.1
−0.1
−0.5
560
−
5.0
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=−50µA
IC=−1µA
IE=−50µA
VCB=−60V
VEB=−6V
IC/IB=−50mA/−5mA
VCE=−6V, IC=−1mA
VCE=−12V, IE=2mA, f=30MHz
VCB=−12V, IE=0A, f=1MHz
!Packaging specifications and hFE
Package
Code
Type
Basic ordering
hFE unit (pieces)
2SA2029 QRS
2SA1037AK QRS
2SA1576A QRS
2SA1774 QRS
2SA933AS QRS
T146
3000
−
−
−
−
T106
3000
−
−
−
−
hFE values are classified as follows:
Item
hFE
Q
120~270
R
180~390
S
270~560
Taping
TL
T2L
3000
8000
−
−−
−−
−
−−
TP
5000
−
−
−
−
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Transistors
!Electrical characteristic curves
−50
Ta=100˚C
−20 25˚C
−40˚C
−10
VCE=−6V
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
2SA1037AK / 2SA1576A / 2SA1774 /
2SA2029 / 2SA933AS
−10
Ta=25˚C
−35.0
−31.5
−8 −28.0
−24.5
−6 −21.0
−17.5
−4 −14.0
−10.5
−2 −7.0
−3.5µA
IB=0
0 −0.4 −0.8 −1.2 −1.6 −2.0
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
−100
Ta=25˚C
−500
−80 −450
−400
−350
−300
−60
−40
−20
−250
−200
−150
−100
−50µA
IB=0
0 −1 −2 −3 −4 −5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics (II)
500
Ta=25˚C
200
VCE=−5V
−3V
−1V
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (I)
500
Ta=100˚C
25˚C
200 −40˚C
100
50
−0.2 −0.5 −1 −2
VCE=−6V
−5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
−1
−0.5
Ta=25˚C
−0.2
−0.1
−0.05
IC/IB=50
20
10
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
−1
−0.5
lC/lB=10
1000
500
Ta=25˚C
VCE=−12V
−0.2
−0.1
−0.05
Ta=100˚C
25˚C
−40˚C
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
200
100
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
20
Cib
10
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cob
5
2
−0.5 −1 −2
−5 −10 −20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
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