C2D10120D PDF даташит
Спецификация C2D10120D изготовлена «Cree» и имеет функцию, называемую «Silicon Carbide Schottky Diode». |
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Детали детали
Номер произв | C2D10120D |
Описание | Silicon Carbide Schottky Diode |
Производители | Cree |
логотип |
6 Pages
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C2D10120D
Silicon Carbide Schottky Diode
Zero Recovery® Rectifier
Features
• 1.2kV Schottky Rectifier
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
•
•
•
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Package
VRRM = 1200 V
IF (TC=135˚C) = 18 A**
Qc = 56 nC**
TO-247-3
Part Number
C2D10120D
Package
TO-247-3
Marking
C2D10120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1200
V
VDC DC Blocking Voltage
1200
V
IF
Continuous Forward Current (Per Leg/Device)
18/36
9/18
5/10
A TTTCCC===211535˚57C˚˚CC
IFRM Repetitive Peak Forward Surge Current
30* A TC=25˚C, tP=10 ms, Half Sine Wave
IFSM Non-Repetitive Peak Forward Surge Current
Ptot Power Dissipation (Per Leg/Device)
TJ , Tstg Operating Junction and Storage Temperature
TO-247 Mounting Torque
* Per Leg, ** Per Device
100*
A TC=25˚C, tP=10 µs, Pulse
138/276
60/120
W
TTCC==2151˚0C˚C
-55 to
+175
˚C
1
8.8
Nm
lbf-
in
M3 Screw
6-32 Screw
1 C2D10120D Rev. H
Free Datasheet http://www.nDatasheet.com
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Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.6 1.8
2.6 3.0
50 200
100 1000
V
μA
QC Total Capacitive Charge
28
nC
C Total Capacitance
455
45 pF
33
N1o. teT:his is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
5
5
A
A
TTJJ==2157°5C°C
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
VdiR/d=t 1=205000V,AI/Fμ=s 5 A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
** Per Leg, * Both Legs
Typ.
1.08**
0.54*
Unit
°C/W
Typical Performance (Per Leg)
10
9
8
7
6
5
4
3
2
1
0
0
1.0 2.0 3.0 4.0 5.0
VF Forward Voltage (V)
200
180
160
140
120
100
80
60
40
20
0
0
500 1000
VR Reverse Voltage (V)
1500
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2 C2D10120D Rev. H
Free Datasheet http://www.nDatasheet.com
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Typical Performance (Per Leg)
660.00
150
550.00
10% Duty*
20% Duty*
125
440.00
30% Duty*
50% Duty*
70% Duty*
100
DC
330.00
75
220.00
50
110.00 25
0.00
2255
500 755 10000 11255 1150 11775
TC CaseCaTseemTepmerpaetrautruere(°C)
* Frequency > 1KHz
Figure 3. Current Derating
400
0
25 50 75 100 125 150 175
Tc Case TTeCmp˚erCature (°C)
Figure 4.FCigaupraec4it.anPocewevrs.DReeravteirnsge Voltage
Page 1
350
300
250
200
150
100
50
0
1
10 100
VR Reverse Voltage (V)
1000
Figure 5. Capacitance vs. Reverse Voltage
3 C2D10120D Rev. H
Free Datasheet http://www.nDatasheet.com
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