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Datasheet 1N6659 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6659 | HYPER FAST RECTIFIER |  SSDI | rectifier |
| 2 | 1N6659 | DUAL ULTRAFAST POWER RECTIFIER TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/616
DEVICES
LEVELS
1N6657 1N6658 1N6659
1N6657R 1N6658R 1N6659R
JAN JANTX JANTXV
ABSOLUTE |  Microsemi | rectifier |
| 3 | 1N6659 | HERMETIC ULTRAFAST RECOVERY RECTIFIER 1N6659 1N6659R
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 186, REV. A
JAN JANTX JANTXV
HERMETIC ULTRAFAST RECOVERY RECTIFIER
DESCRIPTION: 200 VOLT, 30 AMP, 35 NANOSECOND, HERMETIC RECTIFIER IN A TO-254 PACKAGE. MAX RATINGS/ELECTRICAL CHARACTERISTICS RATING PEAK INVERSE VOLTAGE (PER LEG) MA |  Sensitron | rectifier |
| 4 | 1N6659R | DUAL ULTRAFAST POWER RECTIFIER TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/616
DEVICES
LEVELS
1N6657 1N6658 1N6659
1N6657R 1N6658R 1N6659R
JAN JANTX JANTXV
ABSOLUTE | Microsemi | rectifier |
| 5 | 1N6659R | HERMETIC ULTRAFAST RECOVERY RECTIFIER 1N6659 1N6659R
SENSITRON SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 186, REV. A
JAN JANTX JANTXV
HERMETIC ULTRAFAST RECOVERY RECTIFIER
DESCRIPTION: 200 VOLT, 30 AMP, 35 NANOSECOND, HERMETIC RECTIFIER IN A TO-254 PACKAGE. MAX RATINGS/ELECTRICAL CHARACTERISTICS RATING PEAK INVERSE VOLTAGE (PER LEG) MA | Sensitron | rectifier |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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