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PDF 26NM60N Data sheet ( Hoja de datos )
| Número de pieza | 26NM60N | |
| Descripción | STL26NM60N | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL26NM60N
N-channel 600 V, 0.160 Ω, 19 A PowerFLAT™ 8x8 HV
ultra low gate charge MDmesh™ II Power MOSFET
Features
Order code
STL26NM60N
VDSS @
TJmax
650 V
RDS(on)
max
< 0.185 Ω
ID
19 A (1)
1. The value is rated according to Rthj-case
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
3
3
3
'
"OTTOM VIEW
$
0OWER&,!4 X (6
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STL26NM60N
Marking
26NM60N
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
November 2011
Doc ID 18472 Rev 2
1/14
www.st.com
14
Free Datasheet http://www.datasheetlist.com/
1 page  
STL26NM60N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15),
(see Figure 18)
Min. Typ. Max Unit
13 ns
25 ns
--
85 ns
50 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 19 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 15)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
19 A
76 A
1.5 V
370 ns
5.8 µC
31.5 A
450 ns
7.5 µC
32.5 A
Doc ID 18472 Rev 2
5/14
Free Datasheet http://www.datasheetlist.com/
5 Page 
STL26NM60N
Package mechanical data
Figure 19. PowerFLAT™ 8x8 HV drawing mechanical data
BOTTOM VIEW
b
bbb C A B
PIN#1 ID
SIDE VIEW
ccc C
0.08 C
INDEX AREA
D2
D
C
SEATING
PLANE
AB
aaa C
TOP VIEW
aaa C
Doc ID 18472 Rev 2
8222871_Rev_B
11/14
Free Datasheet http://www.datasheetlist.com/
11 Page | ||
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| PDF Descargar | [ Datasheet 26NM60N.PDF ] | |
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