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PDF 3SK227 Data sheet ( Hoja de datos )
| Número de pieza | 3SK227 | |
| Descripción | Silicon N-Channel 4-pin MOS FET | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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High Frequency FETs
3SK227
Silicon N-Channel 4-pin MOS FET
For VHF amplification
s Features
q Low noise-figure (NF)
q Large power gain PG
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.2
1.5 –0.3
unit: mm
0.65±0.15
0.5R
41
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate 1 to Source voltage
Gate 2 to Source voltage
Drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
15
±8
±8
±30
200
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
32
0.4±0.2
1: Source
2: Drain
3: Gate2
4: Gate1
Mini Type Package (4-pin)
Marking Symbol: CX
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain current
IDS VDS = 10V, VG1S = 1V, VG2S = 5V 6
25 mA
Gate 1 cut-off current
IG1SS
VDS = VG2S = 0, VG1S = ±8V
±20 nA
Gate 2 cut-off current
IG2SS
VDS = VG1S = 0, VG2S = ±8V
±20 nA
Drain to Source voltage
VDSX
ID = 50µA, VG1S = −5V, VG2S = 0
15
V
Gate 1 to Source cut-off voltage VG1SC VDS = 10V, VG2S = 5V, ID = 100µA −1.5
1V
Gate 2 to Source cut-off voltage VG2SC VDS = 10V, VG1S = 5V, ID = 100µA
0
1V
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 10mA, VG2S = 5V, f = 1kHz 21
26
31 mS
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
VDS = 10V, VG1S = VG2S = −5V
f = 1MHz
2.8 pF
1.1 pF
0.02 pF
Power gain
PG VDS = 6V, ID = 8mA, VG2S = 4V 18.5 20.5
dB
Noise figure
NF f = 790 to 810MHz (Sweep)
2.5 3.7 dB
1
Free Datasheet http://www.datasheet-pdf.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 3SK227.PDF ] | |
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