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даташит 04N50Z PDF ( Datasheet )

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Номер произв 04N50Z
Описание NSS04N50Z
Производители ON Semiconductor
логотип ON Semiconductor логотип 



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04N50Z Даташит, Описание, Даташиты
NDP04N50Z, NDD04N50Z
N-Channel Power MOSFET
500 V, 2.7 W
Features
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDP NDD Unit
DraintoSource Voltage
Continuous Drain Current RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC
GatetoSource Voltage
Single Pulse Avalanche Energy,
ID = 3.4 A
ESD (HBM) (JESD22A114)
Peak Diode Recovery
VDSS
ID
ID
IDM
PD
VGS
EAS
Vesd
dv/dt
500
3.4 3.0
2.1 1.9
V
A
A
14 12
75 61
±30
120
A
W
V
mJ
2800
4.5 (Note 1)
V
V/ns
Continuous Source Current
(Body Diode)
IS 3.4 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. ID v 3.4 A, di/dt 200 A/ms, VDD BVDSS, TJ 150°C.
http://onsemi.com
VDSS
500 V
RDS(on) (MAX) @ 1.5 A
2.7 W
NChannel
D (2)
G (1)
S (3)
1 23
TO220AB
CASE 221A
STYLE 5
4
4
1 23
IPAK
CASE 369D
STYLE 2
12
3
DPAK
CASE 369AA
STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
July, 2010 Rev. 0
1
Publication Order Number:
NDD04N50Z/D
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04N50Z Даташит, Описание, Даташиты
NDP04N50Z, NDD04N50Z
THERMAL RESISTANCE
Parameter
Symbol
JunctiontoCase (Drain)
NDP04N50Z
NDD04N50Z
RqJC
JunctiontoAmbient Steady State
(Note 2) NDP04N50Z
(Note 3) NDD04N50Z
(Note 2) NDD04N50Z1
RqJA
2. Insertion mounted
3. Surface mounted on FR4 board using 1sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
DraintoSource Leakage Current
BVDSS
DBVDSS/
DTJ
IDSS
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
VDS = 500 V, VGS = 0 V
25°C
150°C
GatetoSource Forward Leakage
ON CHARACTERISTICS (Note 4)
Static DraintoSource
OnResistance
IGSS
RDS(on)
VGS = ±20 V
VGS = 10 V, ID = 1.5 A
Gate Threshold Voltage
VGS(th)
Forward Transconductance
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
GatetoSource Charge
Qgs
GatetoDrain (“Miller”) Charge
Qgd
Plateau Voltage
VGP
Gate Resistance
Rg
RESISTIVE SWITCHING CHARACTERISTICS
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 250 V, ID = 3.4 A,
VGS = 10 V
VDD = 250 V, ID = 3.4 A,
VGS = 10 V, RG = 5 W
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD IS = 3.4 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0 V, VDD = 30 V
Qrr IS = 3.4 A, di/dt = 100 A/ms
4. Pulse Width 380 ms, Duty Cycle 2%.
Min
500
3.0
Value
1.6
2.0
51
40
80
Typ
0.6
2.3
2.1
308
43
9
12
2.6
6.1
6.6
5.4
9
9
16
10
240
0.9
Max
1
50
±10
2.7
4.5
1.6
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
V
W
ns
V
ns
mC
http://onsemi.com
2
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04N50Z Даташит, Описание, Даташиты
NDP04N50Z, NDD04N50Z
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
VGS = 10 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
5.0 10.0 15.0 20.0
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
4.0
VDS = 25 V
3.5
3.0
2.5
2.0
1.5 TJ = 25°C
1.0
TJ = 150°C
0.5
TJ = 55°C
0.0
25.0 3 4 5 6 7 8 9
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
10
4.00
3.75
3.50
3.25
3.00
2.75
2.50
ID = 1.5 A
TJ = 25°C
4.00
3.75
3.50
3.25
3.00
2.75
2.50
2.25
VGS = 10 V
TJ = 25°C
2.25
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnRegion versus GatetoSource
Voltage
2.00
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID, DRAIN CURRENT (A)
Figure 4. OnResistance versus Drain
Current and Gate Voltage
4.0
2.50
2.25
2.00
ID = 1.5 A
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
50 25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
1.15
1.10
ID = 1 mA
1.05
1.00
0.95
0.90
150 50 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
http://onsemi.com
3
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