04N50Z PDF даташит
Спецификация 04N50Z изготовлена «ON Semiconductor» и имеет функцию, называемую «NSS04N50Z». |
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Детали детали
Номер произв | 04N50Z |
Описание | NSS04N50Z |
Производители | ON Semiconductor |
логотип |
9 Pages
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NDP04N50Z, NDD04N50Z
N-Channel Power MOSFET
500 V, 2.7 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDP NDD Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
ID = 3.4 A
ESD (HBM) (JESD22−A114)
Peak Diode Recovery
VDSS
ID
ID
IDM
PD
VGS
EAS
Vesd
dv/dt
500
3.4 3.0
2.1 1.9
V
A
A
14 12
75 61
±30
120
A
W
V
mJ
2800
4.5 (Note 1)
V
V/ns
Continuous Source Current
(Body Diode)
IS 3.4 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. ID v 3.4 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.
http://onsemi.com
VDSS
500 V
RDS(on) (MAX) @ 1.5 A
2.7 W
N−Channel
D (2)
G (1)
S (3)
1 23
TO−220AB
CASE 221A
STYLE 5
4
4
1 23
IPAK
CASE 369D
STYLE 2
12
3
DPAK
CASE 369AA
STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 0
1
Publication Order Number:
NDD04N50Z/D
Free Datasheet http://www.datasheet4u.net/
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NDP04N50Z, NDD04N50Z
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain)
NDP04N50Z
NDD04N50Z
RqJC
Junction−to−Ambient Steady State
(Note 2) NDP04N50Z
(Note 3) NDD04N50Z
(Note 2) NDD04N50Z−1
RqJA
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
BVDSS
DBVDSS/
DTJ
IDSS
VGS = 0 V, ID = 1 mA
Reference to 25°C,
ID = 1 mA
VDS = 500 V, VGS = 0 V
25°C
150°C
Gate−to−Source Forward Leakage
ON CHARACTERISTICS (Note 4)
Static Drain−to−Source
On−Resistance
IGSS
RDS(on)
VGS = ±20 V
VGS = 10 V, ID = 1.5 A
Gate Threshold Voltage
VGS(th)
Forward Transconductance
gFS
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
Gate−to−Drain (“Miller”) Charge
Qgd
Plateau Voltage
VGP
Gate Resistance
Rg
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 1.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDD = 250 V, ID = 3.4 A,
VGS = 10 V
VDD = 250 V, ID = 3.4 A,
VGS = 10 V, RG = 5 W
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD IS = 3.4 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0 V, VDD = 30 V
Qrr IS = 3.4 A, di/dt = 100 A/ms
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
Min
500
3.0
Value
1.6
2.0
51
40
80
Typ
0.6
2.3
2.1
308
43
9
12
2.6
6.1
6.6
5.4
9
9
16
10
240
0.9
Max
1
50
±10
2.7
4.5
1.6
Unit
°C/W
Unit
V
V/°C
mA
mA
W
V
S
pF
nC
V
W
ns
V
ns
mC
http://onsemi.com
2
Free Datasheet http://www.datasheet4u.net/
No Preview Available ! |
NDP04N50Z, NDD04N50Z
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
VGS = 10 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
5.0 10.0 15.0 20.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
4.0
VDS = 25 V
3.5
3.0
2.5
2.0
1.5 TJ = 25°C
1.0
TJ = 150°C
0.5
TJ = −55°C
0.0
25.0 3 4 5 6 7 8 9
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
10
4.00
3.75
3.50
3.25
3.00
2.75
2.50
ID = 1.5 A
TJ = 25°C
4.00
3.75
3.50
3.25
3.00
2.75
2.50
2.25
VGS = 10 V
TJ = 25°C
2.25
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region versus Gate−to−Source
Voltage
2.00
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
4.0
2.50
2.25
2.00
ID = 1.5 A
VGS = 10 V
1.75
1.50
1.25
1.00
0.75
0.50
0.25
−50 −25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.15
1.10
ID = 1 mA
1.05
1.00
0.95
0.90
150 −50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. BVDSS Variation with Temperature
http://onsemi.com
3
Free Datasheet http://www.datasheet4u.net/
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04N50Z | NSS04N50Z | ON Semiconductor |
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