ME60N03AS PDF даташит
Спецификация ME60N03AS изготовлена «Matsuki» и имеет функцию, называемую «25V N-Channel Enhancement Mode MOSFET». |
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Детали детали
Номер произв | ME60N03AS |
Описание | 25V N-Channel Enhancement Mode MOSFET |
Производители | Matsuki |
логотип |
5 Pages
No Preview Available ! |
25V N-Channel Enhancement Mode MOSFET
VDS=25V
RDS(ON), Vgs@10V,Ids@30A ≦ 9mΩ
RDS(ON), Vgs@ 5V,Ids@15A ≦18mΩ
FEATURES
Advanced trench process technology
High density cell design for ultra low on-resistance
Specially designed for DC/DC converters and motor drivers
Fully characterized avalanche voltage and current
ME60N03AS
APPLICATIONS
● Motherboard (V-Core)
● DC/DC Converter
● Load Switch
● LCD Display inverter
● IPC
PIN CONFIGURATION
(TO-252)
Top View
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(Tj=150℃)* TC=25℃
Pulsed Drain Current
Maximum Power Dissipation
TC=25℃
TC=70℃
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse(L=0.1mH,Rg=25Ω)
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
EAS
RθJA
RθJC
Limit
25
±20
53
100
40
25
-55 to 150
50
T≦10 sec
Steady State
3.1
15
40
Unit
V
V
A
A
W
℃
mJ
℃/W
℃/W
Sep, 2008 – Version 2.1
01Free Datasheet http://www.datasheet4u.net/
No Preview Available ! |
25V N-Channel Enhancement Mode MOSFET
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
ME60N03AS
Symbol
STATIC
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg
td(on)
tr
td(off)
tf
Gate Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
SOURCE-DRAIN DIODE
IS Max.Diode Forward Current
VSD Diode Forward Voltage
Note: Pulse test: pulse width<=300us, duty cycle<=2%
Limit
Min Typ Max Unit
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=25V, VGS=0V
VGS=10V, ID=30A
VGS= 5V, ID=15A
25 V
1 3V
±100 nA
1 μA
6.7 9
mΩ
13 18
VDS=15V, VGS=10V, ID=25A
VDS=15V, VGS=4.5V, ID=25A
VDS=15V, VGS=0V,
f=1MHz
VDS=0V, VGS=0V, f=1MHz
RL=15Ω, VGEN =10V, ID=1A
VDD=15V, RG=3Ω
22
11
5.4
5.5
840
180
55
1
13.5
13
42
4
nC
pF
Ω
ns
IS=20A, VGS=0V
0.87
20
1.5
A
V
Sep, 2008 – Version 2.1
02Free Datasheet http://www.datasheet4u.net/
No Preview Available ! |
25V N-Channel Enhancement Mode MOSFET
Typical Characteristics (TJ =25℃ Noted)
ME60N03AS
Sep, 2008 – Version 2.1
03Free Datasheet http://www.datasheet4u.net/
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Номер в каталоге | Описание | Производители |
ME60N03A | 25V N-Channel Enhancement Mode MOSFET | Matsuki |
ME60N03AS | 25V N-Channel Enhancement Mode MOSFET | Matsuki |
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