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STK544UC62K-E PDF даташит

Спецификация STK544UC62K-E изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Intelligent Power Module».

Детали детали

Номер произв STK544UC62K-E
Описание Intelligent Power Module
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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STK544UC62K-E Даташит, Описание, Даташиты
STK544UC62K-E
Intelligent Power Module (IPM)
600 V, 10 A
Overview
This Inverter IPM includes the output stage of a 3-phase inverter,
pre-drive circuits, bootstrap circuits, and protection circuits in one
package.
www.onsemi.com
Function
SIP (single in-line package) of the transfer full mold structure.
The emitter line of the each lower phase outputs to an external terminal
with the option of control using 3-phase current detection with external
resistors.
Direct input of CMOS level control signals without an insulating
circuit is possible.
Protective circuits including over current and pre-drive low voltage
protection are built in.
A single power supply drive is enabled through the use of bootstrap
circuits for upper IGBT gate drives.
Built-in dead-time for shoot-thru protection.
Internal substrate temperature is measured with an internal pulled up
thermistor.
Certification
UL1557 (File Number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
Collector-emitter voltage
VCC
VCE
V+ to VRU(VRV,VRW), surge < 500 V
V+ to U(V,W) or U(V,W) to VRU(VRV,VRW)
*1 450
600
V
V
Output current
Output peak current
Pre-driver voltage
Io
Iop
VD1,2,3,4
V+, VRU,VRV,VRW, U,V,W terminal current
V+, VRU,VRV,VRW, U,V,W terminal current at Tc = 100C
V+, VRU,VRV,VRW, U,V,W terminal current for a pulse width
of 1 ms
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
*2
±10
±6
±20
20
A
A
A
V
Input signal voltage
ITRIP terminal voltage
VIN
VITRIP
HIN1, 2, 3, LIN1, 2, 3 terminals
ITRIP terminal
0.3 to 7
VSS+5
V
V
Maximum power dissipation Pd
IGBT per 1 channel
22 W
Junction temperature
Tj
IGBT,FRD
150 C
Storage temperature
Tstg
40 to +125
C
Operating case temperature Tc
IPM case temperature
40 to +100
C
Tightening torque
Case mounting screws
*3 0.9
Nm
Withstand voltage
Vis 50 Hz sine wave AC 1 minute
*4
2000
VRMS
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : Surge voltage developed by the switching operation due to the wiring inductance between V+ and VRU(VRV,VRW) terminals.
*2 : VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS terminal voltage.
*3 : Flatness of the heat-sink should be less than 50 m to +100 m.
*4 : Test conditions : AC 2500 V, 1 second.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
December 2016 - Rev. 3
1
Publication Order Number :
STK544UC62K-E/D









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STK544UC62K-E Даташит, Описание, Даташиты
STK544UC62K-E
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter
Symbol
Conditions
Test
circuit
Ratings
min typ max
Unit
Power output section
Collector-emitter cut-off current
Bootstrap diode reverse current
Collector to emitter saturation
voltage
ICE
IR(BD)
VCE(SAT)
Diode forward voltage
VF
Bootstrap diode forward voltage
VF(BD)
Bootstrap circuit resistance
RBC
RBS
Junction to case thermal resistance
Thermal resistance case to sink
θj-c(T)
θj-c(D)
Rth(c-s)
VCE = 600 V
VR(BD) = 600 V
Io = 10 A, Tj = 25C
Io = 5 A, Tj = 100C
Io = 10 A, Tj = 25C
Io = 5 A, Tj = 100C
IF = 0.1 A
Resistor value for common boot
charge line
Resister values for separate
boot charge lines
IGBT
FRD
1W/mK thermal conductivity *1
Fig.1
Fig.2
Fig.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- 0.1 mA
- 0.1 mA
1.4 2.3
V
1.3 -
1.3 2.2
V
1.2 -
2.0 - V
2-
Ω
10 -
4.5 5.5
5.5 6.5 C/W
0.1 -
Protection section
FAULT clearance delay time
FLTCLR
Form time fault condition clears -
6 9 12 ms
Switching time
t ON
t OFF
Io = 10 A
Inductive load
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1 : At 100 μm thickness of the thermal grease.
- 0.48 -
Fig.5
μs
- 0.54 -
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Electrical Characteristics Driver Function at Tc 25C
Parameter
Symbol
Supply section
VDD and VBS supply undervoltage protection reset
VDDUV+
VBSUV+
VDD and VBS supply undervoltage protection set
VDDUV-
VBSUV-
VDD and VBS supply undervoltage hysteresis
VDDUVH
VBSUVH
Quiescent VDD supply current
Quiescent VBS supply current
IQDD
IQBS
Input section
Logic low input voltage
VINL
Logic high input voltage
VINH
Logic 0 input leakage current
IIN+
Logic 1 input leakage current
IIN-
ITRIP threshold voltage (OUT = LO or OUT = HI)
VITRIP
Dynamic section
Dead time (Internal dead time injected by driver)
DT
ITRIP to shutdown propagation delay
tITRIP
ITRIP blanking time
tITRPBL
Reference voltage is “VSS” terminal voltage unless otherwise specified.
Test
circuit
Ratings
min typ max
Unit
- 10.5 11.1 11.7 V
- 10.3 10.9 11.5 V
- 0.14 0.2
- 2.0
Fig.4
- 0.08
-V
4.0 mA
0.4 mA
- - - 0.8 V
- 2.5
-V
- 76 118 160 μA
- 97 150 203 μA
-
3.67 4.17 4.67
V
- 220 300 380 ns
- 1.0 1.2 1.4 μs
- - 0.9 - μs
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STK544UC62K-E Даташит, Описание, Даташиты
STK544UC62K-E
Switching Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15 V
Parameter
Symbol
Conditions
Ratings
min typ max
Unit
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon IC = 5 A, V+ = 400 V
Eoff VDD = 15 V, L = 3.9 mH,
Etot Tc = 25C
- 195 - μJ
- 122 - μJ
- 317 - μJ
Turn-on switching loss
Turn-off switching loss
Total switching loss
Eon IC = 5 A, V+ = 400 V,
Eoff VDD = 15 V, L = 3.9 mH,
Etot Tc = 100C
- 224 - μJ
- 186 - μJ
- 410 - μJ
Diode reverse recovery time
trr
IF = 5A, V+ = 400 V, VDD = 15 V,
-
70
- ns
L = 3.9 mH, Tc = 100C
Reverse bias safe operating area
RBSOA
Io = 20 A, VCE = 450 V
FULL SQUARE
-
Short circuit safe operating area
SCSOA
VCE = 400 V
4 - - μs
VDD = VB1 = VB2 = VB3 = 15 V, VSS = VS1 = VS2 = VS3 = 0 V, outputs loaded with 1 nF, all voltage are referenced to VSS ; unless
otherwise noted.
Internal NTC-Thermistor Characteristics
Parameter
Conditions
R25 Resistance
R125 Resistance
B B-Constant (25 to 50C)
Temperature range
Tc = 25C
Tc = 125C
R2 = R1e[B(1/T2-1/T1)]
-
Typ. Dissipation constant
Tc=25C
Typ.
100 ±3%
2.522 ±3%
4250 ±1%
40 to +125
1
Unit
k
k
K
C
mW/C
Notes
1. The pre-drive power supply low voltage protection has approximately 200 mV of hysteresis and operates as follows.
Upper side : The gate is turned off and will return to regular operation when recovering to the normal voltage, but the latch will
continue till the input signal will turn ‘high’.
Lower side : The gate is turned off and will automatically reset when recovering to normal voltage. It does not depend on input signal
voltage.
2. When assembling the IPM on the heat sink the tightening torque range is 0.6 Nm to 0.9 Nm.
3. The pre-drive low voltage protection protects the device when the pre-drive supply voltage falls due to an operating malfunction.
4. When use the over-current protection with external shunt resistor, please set the current protection level to be equal to or less than the
rating of output peak current (Iop).
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3










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Номер в каталогеОписаниеПроизводители
STK544UC62K-EIntelligent Power ModuleON Semiconductor
ON Semiconductor

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